Zobrazeno 1 - 10
of 14
pro vyhledávání: '"J. Marcelo J. Lopes"'
Publikováno v:
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-7 (2021)
Abstract The combination of two-dimensional (2D) materials into heterostructures enables the formation of atomically thin devices with designed properties. To achieve a high-density, bottom-up integration, the growth of these 2D heterostructures via
Externí odkaz:
https://doaj.org/article/7d8dd893fc92480bb120e784c652f030
Autor:
Zhao Liu, Bartosz Szczefanowicz, J. Marcelo J. Lopes, Ziyang Gan, Antony George, Andrey Turchanin, Roland Bennewitz
Publikováno v:
Nanoscale. 15:5809-5815
Stacked hetero-structures of two-dimensional materials allow for a design of interactions with corresponding electronic and mechanical properties.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47dbaef67cf8f582d18b0eca0bd96c45
https://doi.org/10.1039/d3nr00138e
https://doi.org/10.1039/d3nr00138e
Autor:
Martin Heilmann, J. Marcelo J. Lopes, Alexander S. Prikhodko, Nikolai I. Borgardt, Michael Hanke, Alexander Sabelfeld
Publikováno v:
ACS Applied Materials & Interfaces. 12:8897-8907
Combining graphene and the insulating hexagonal boron nitride (h-BN) into two-dimensional heterostructures is promising for novel, atomically thin electronic nanodevices. A heteroepitaxial growth, in which these materials are grown on top of each oth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0d03aebced1c774fa4df1a479fd73a5
https://doi.org/10.1021/acsami.9b21490
https://doi.org/10.1021/acsami.9b21490
Autor:
J. Marcelo J. Lopes
Publikováno v:
Molecular Beam Epitaxy ISBN: 9781119354987
Molecular Beam Epitaxy
Molecular Beam Epitaxy
The implementation of graphene in different applications will only be possible if the large‐area and high‐quality production of this material becomes a reality. The ideal synthesis method would allow for precisely controlled formation of graphene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9ec9ef461f79e292a6c9c43ea84e96c
https://doi.org/10.1002/9781119354987.ch24
https://doi.org/10.1002/9781119354987.ch24
Autor:
J. Marcelo J. Lopes
Publikováno v:
Progress in Crystal Growth and Characterization of Materials. 67:100522
Hexagonal boron nitride (h-BN) is a wide band gap layered material that is promising for a plethora of applications ranging from neutron detection to quantum information processing. Moreover, it has become highly relevant in the field of two-dimensio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4ef28f69dab3da5c2139dcc22ab2091
https://doi.org/10.1016/j.pcrysgrow.2021.100522
https://doi.org/10.1016/j.pcrysgrow.2021.100522
Autor:
Gabriel Vieira Soares, Cláudio Radtke, Lauren A. Galves, J. Marcelo J. Lopes, Gabriela Copetti, Eduardo H. Nunes, Martin Heilmann, Taís Orestes Feijó
Publikováno v:
Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
As different low-dimensional materials are sought to be incorporated into microelectronic devices, graphene integration is dependent on the development of band gap opening strategies. Amidst the different methods currently investigated, application o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f2b9c1b311201f6a87d0222a27a9868
https://doi.org/10.1088/1361-6528/abd43a
https://doi.org/10.1088/1361-6528/abd43a
Autor:
Adriana I. Figueroa, Eugenio Zallo, Dietmar Czubak, Michael Hanke, Manfred Ramsteiner, Charles Guillemard, Sergio O. Valenzuela, Juan Rubio-Zuazo, Jesús López-Sánchez, Manuel Valvidares, J. Marcelo J. Lopes
Publikováno v:
'2D Materials ', vol: 8, pages: 041001-1-041001-8 (2021)
2D Materials
Digital.CSIC. Repositorio Institucional del CSIC
instname
2D Materials
Digital.CSIC. Repositorio Institucional del CSIC
instname
Scalable fabrication of magnetic 2D materials and heterostructures constitutes a crucial step for scaling down current spintronic devices and the development of novel spintronic applications. Here, we report on van der Waals (vdW) epitaxy of the laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ec05401757cc1603d96de62d37e4283
https://epn-library.esrf.fr/flora/jsp/index_view_direct_anonymous.jsp?record=doc:PUB_ESRF:58214
https://epn-library.esrf.fr/flora/jsp/index_view_direct_anonymous.jsp?record=doc:PUB_ESRF:58214
Publikováno v:
Journal of Applied Physics. 125:115301
Scalable fabrication of atomically thin hexagonal boron nitride (h-BN) films is highly important for the future implementation of this two-dimensional dielectric in various applications. In this contribution, we report on systematical growth experime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac2d2a3a1bd005b10346fb0c0fd15727
https://doi.org/10.1063/1.5081806
https://doi.org/10.1063/1.5081806
Autor:
Jürgen Schubert, Eylem Durğun Özben, R. Luptak, Martina Luysberg, Uwe Breuer, J. Marcelo. J Lopes, A. Besmehn, M. Schnee, Qing-Tai Zhao, Siegfried Mantl, A. T. Tiedemann, A. Nichau, St. Lenk, Wenjie Yu
Publikováno v:
ECS Transactions. 35:461-479
The miniaturization of metal-oxide-semiconductor field effect transistors (MOSFETs) is approaching fundamental limits. Novel materials and innovative device structures are needed in order to continue the evolution of complementary metal-oxide-semicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33e5601cea74e82dd058561f3a08e97e
https://doi.org/10.1149/1.3572299
https://doi.org/10.1149/1.3572299
Autor:
S. Mantl, Konstantin Bourdelle, S. Lenk, Qing-Tai Zhao, J. Marcelo. J Lopes, A. Besmehn, A. Nichau, Jürgen Schubert, Eylem Durğun Özben
Publikováno v:
ECS Transactions. 33:195-202
We investigated the electrical and structural properties of TbScO3 as an alternative gate dielectric. Rutherford backscattering spectrometry revealed a stoichiometric film while X-ray photo-electron spectroscopy indicated silicate formation at the in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b1676630cb5438f87bc58ef1af333ded
https://doi.org/10.1149/1.3481606
https://doi.org/10.1149/1.3481606