Phonon probe of local strains in SnSxSe2−xmixed crystals

Autor: Viktor G. Hadjiev, Debtanu De, J. Manongdo, Haibing Peng, Arnold M. Guloy

Publikováno v: Physical Review B. 87

We present a combined Raman spectroscopy and density functional perturbation theory (DFPT) study of phonon variation with composition $x$ in the mixed crystals SnS${}_{x}$Se${}_{2\ensuremath{-}x}$. The experimentally observed two-mode behavior of the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fcc9fac82050c784c531ff5558cd54fd
https://doi.org/10.1103/physrevb.87.104302

Engineering of the perovskite/electron-transporting layer interface with transition metal chalcogenides for improving the performance of inverted perovskite solar cells.

Autor: Tsikritzis, Dimitris, Chatzimanolis, Konstantinos, Tzoganakis, Nikolaos, Rogdakis, Konstantinos, Zappia, Marilena Isabella, Martín-García, Beatriz, Bagheri, Ahmad, Beydaghi, Hossein, Děkanovský, Lukáš, Sofer, Zdeněk, Bellani, Sebastiano, Bonaccorso, Francesco, Kymakis, Emmanuel

Publikováno v: Sustainable Energy & Fuels; 5/21/2024, Vol. 8 Issue 10, p2180-2190, 11p

Electronics and Optoelectronics Based on Tellurium.

Autor: Zha J; Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, SAR, 999077, China., Dong D; Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, SAR, 999077, China., Huang H; Department of Electrical Engineering, City University of Hong Kong, Hong Kong, SAR, 999077, China., Xia Y; Department of Electrical Engineering, City University of Hong Kong, Hong Kong, SAR, 999077, China., Tong J; Department of Electrical Engineering, City University of Hong Kong, Hong Kong, SAR, 999077, China., Liu H; Department of Electrical Engineering, City University of Hong Kong, Hong Kong, SAR, 999077, China., Chan HP; Department of Electrical Engineering, City University of Hong Kong, Hong Kong, SAR, 999077, China., Ho JC; Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR, 999077, China., Zhao C; Huawei Technologies CO., LTD, Shenzhen, 518000, China., Chai Y; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, SAR, 999077, China., Tan C; Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, SAR, 999077, China.; Department of Electrical Engineering, City University of Hong Kong, Hong Kong, SAR, 999077, China.

Publikováno v: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Nov; Vol. 36 (45), pp. e2408969. Date of Electronic Publication: 2024 Sep 16.

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Understanding the influence of Bi/Sb substitution on carrier concentration in Mg3Sb2-based materials: decreasing bandgap enhances the degree of impurity ionization.

Autor: Li, Juan, Jia, Fei, Han, Kai, Sun, Bing, Cao, Lianzhen, Li, Yingde, Zhang, Shuai

Publikováno v: Physical Chemistry Chemical Physics (PCCP); 12/7/2022, Vol. 24 Issue 45, p27812-27818, 7p