Zobrazeno 1 - 10
of 435
pro vyhledávání: '"J. Mankowski"'
Publikováno v:
AIP Advances, Vol 14, Iss 4, Pp 045235-045235-8 (2024)
A comparative analysis of the attachment efficacy of sharpened vs blunted air terminals under a strong background DC electric field, similar to conditions found in naturally occurring lightning events, is presented. Testing was conducted using an oil
Externí odkaz:
https://doaj.org/article/1dc9db2132834a239753a77a6ee223ff
Publikováno v:
AIP Advances, Vol 8, Iss 1, Pp 015325-015325-5 (2018)
The suppression of secondary electron yield (SEY) which can possibly lead to multipactor is an important goal for several applications. Though some techniques have focused on geometric modifications to lower the SEY, the use of graphene coatings as t
Externí odkaz:
https://doaj.org/article/5f0366b9a035410bbe0cb3ba2a61c9e2
Publikováno v:
Journal of Virus Eradication, Vol 3, Iss , Pp 8- (2017)
Externí odkaz:
https://doaj.org/article/018ef954697f405d87ede0c17ced7925
Publikováno v:
Journal of Virus Eradication, Vol 3, Iss , Pp 11- (2017)
Externí odkaz:
https://doaj.org/article/1b84a6c8ea68466bb9623f1b8c1266a5
Autor:
A. T. Hewitt, B. Esser, R. P. Joshi, J. Mankowski, J. Dickens, A. Neuber, R. Lee, J. Stephens
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 70:2217-2223
Publikováno v:
2022 IEEE International Power Modulator and High Voltage Conference (IPMHVC).
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
W. A. Harrison, James C. Dickens, Andreas A. Neuber, John J. Mankowski, D. H. Barnett, David Hattz, William Brooks
Publikováno v:
IEEE Transactions on Plasma Science. 48:2163-2174
A 3-D Monte Carlo-type random walk model was constructed for the assessment of lightning attachment probabilities to small structures. The simulation assumed buildings had a negligible impact on the propagation of lightning. A purely stochastic propa
Publikováno v:
IEEE Transactions on Plasma Science. 47:5306-5313
Solid-state semiconductor switches are emerging as an attractive choice for the fast switching of compact, repetitive, and pulsed power systems. In particular, the high voltage and fast switching capabilities of SiC MOSFETs are well suited for many a
Autor:
M LaPointe, B. Esser, I. Aponte, Z. Cardenas, J. Dickens, J. Mankowski, J. Stephens, Donald Friesen, N. Koone, D. Hattz, A. Neuber
Publikováno v:
IEEE Pulsed Power Conference & Symposium on Fusion Engineering (PPC SOFE 2021), December 12-16, 2021.