Zobrazeno 1 - 10
of 238
pro vyhledávání: '"J. Maege"'
Autor:
A. Klein, Juergen Sebastian, Hans Wenzel, J. Maege, G. Trankle, G. Beister, Andreas Klehr, I. Rechenberg, G. Erbert
Publikováno v:
Journal of Applied Physics. 90:43-47
A nondestructive method is presented which allows a precise detection of defects and their positions inside the cavity of semiconductor lasers. The defect recognition is based on the measurement of the longitudinal mode spectrum below threshold and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cde69c7969b92215dc5a9aee181bdd7
https://doi.org/10.1063/1.1347408
https://doi.org/10.1063/1.1347408
Autor:
W. Pittroff, J. Maege, Peter Ressel, R. Staske, Guenther Traenkle, Arne Knauer, G. Beister, Götz Erbert, A. Klein, Frank Bugge, Juergen Sebastian
Publikováno v:
IEEE Transactions on Advanced Packaging. 24:434-441
High power diode lasers have become more and more important to industrial and medical applications. In contrast to low power applications, long cavity lasers or laser bars are used in this field and mounting quality influences considerably laser perf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48eac101f6eccb420c296086ea3e2c48
https://doi.org/10.1109/6040.982826
https://doi.org/10.1109/6040.982826
Publikováno v:
Solid-State Electronics. 42:1939-1945
We present a novel, non-destructive optoelectronic technique to study passivation and degradation mechanisms at diode laser facets. We extract the non-radiative current components, Inr, from the electroluminescence power–voltage–current character
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61c2ebf772cb6c9b059999e772f7aeb8
https://doi.org/10.1016/s0038-1101(98)00178-6
https://doi.org/10.1016/s0038-1101(98)00178-6
Publikováno v:
Quantum Electronics. 25:291-301
A study was made of quantum-well injection lasers with a strained active InGaAs layer, emitting at 980 nm. At room temperature the minimum threshold current density for a layer 6–7 nm thick was 120 A cm-2 in a cavity 540 μm long. Phenomena which a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8571cf65e73eceb12009823bf5e8a3b2
https://doi.org/10.1070/qe1995v025n04abeh000349
https://doi.org/10.1070/qe1995v025n04abeh000349
Autor:
U. Richter, A. Klein, G. Beister, S. S. Ruvimov, I. Rechenberg, M. Pilatzek, Markus Weyers, Frank Bugge, H. Treptow, S. Gramlich, J. Maege, G. Erbert
Publikováno v:
Scopus-Elsevier
Transmission electron microscopy investigations show that dislocations nucleated during the processing of InGaAs/GaAs laser diodes and developed under high internal stress during laser operation are the primary sources of rapid degradation processes.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2569deffc2029d713a8d4aec87ef11e9
https://doi.org/10.1016/0921-5107(94)90072-8
https://doi.org/10.1016/0921-5107(94)90072-8
Publikováno v:
Solid-State Electronics. 34:883-888
Aging experiments on ridge waveguide (RW) InGaAsP/InP laser diodes at elevated temperatures have been combined with observations of the injected carrier balance inside the laser structure. Measurements of the spontaneous emission intensity (P) and a.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82faa0bf9d5d64f0625658275dc1b26e
https://doi.org/10.1016/0038-1101(91)90235-q
https://doi.org/10.1016/0038-1101(91)90235-q
Autor:
J. Maege, P. Krispin
Publikováno v:
Defect Complexes in Semiconductor Structures ISBN: 9783540119869
Shallow diffusions of zinc in GaP epitaxial layers were carried out varying the positions on the Ga-P-Zn phase diagram. Under special diffusion conditions zinc profiles were obtained as predicted by the subsitutional-interstitial theory in which the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d52a00c3387383236772e9b8c08bea2b
https://doi.org/10.1007/3-540-11986-8_20
https://doi.org/10.1007/3-540-11986-8_20
Publikováno v:
Solid-State Electronics. 33:227-233
The influence of rechargeable traps at the isotype interface in AlGaAs/GaAs P+pN+ double-heterostructure lasers on the apparent carrier profile is evaluated. C-V measurements at different frequencies demonstrate the effects of interface states in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8d7b046783fef41d3c3e983a6c50eb9
https://doi.org/10.1016/0038-1101(90)90161-7
https://doi.org/10.1016/0038-1101(90)90161-7
Autor:
F. Bugge, G. Beister, Juergen Sebastian, A. Thies, Peter Ressel, J. Maege, Hans Wenzel, G. Erbert
Publikováno v:
CLEO/Europe Conference on Lasers and Electro-Optics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0202f3f47214eb9d543785e00134d29
https://doi.org/10.1109/cleoe.1998.719026
https://doi.org/10.1109/cleoe.1998.719026