Zobrazeno 1 - 10
of 3 286
pro vyhledávání: '"J. M. Redwing"'
Autor:
Kim, Woochul1,2 (AUTHOR), Ahn, Dante1,3 (AUTHOR), Lee, Minz1,4 (AUTHOR), Lim, Namsoo1 (AUTHOR), Kim, Hyeonghun5,6 (AUTHOR) hyhkim1210@jnu.ac.kr, Pak, Yusin1 (AUTHOR) yusinpak@kist.re.kr
Publikováno v:
Small Science. Dec2024, Vol. 4 Issue 12, p1-27. 27p.
Autor:
Huang, Chang‐Hsun1 (AUTHOR), Wu, Chia‐Yi1 (AUTHOR), Chou, Yi‐Chia1 (AUTHOR) ycchou@ntu.edu.tw
Publikováno v:
Advanced Science. 11/6/2024, Vol. 11 Issue 41, p1-11. 11p.
Autor:
Li, Dingwei1,2,3 (AUTHOR), Chen, Yitong2,3 (AUTHOR), Ren, Huihui2,3 (AUTHOR), Tang, Yingjie2,3 (AUTHOR), Zhang, Siyu1,2 (AUTHOR), Wang, Yan2,3 (AUTHOR), Xing, Lixiang1 (AUTHOR), Huang, Qi1 (AUTHOR), Meng, Lei4 (AUTHOR), Zhu, Bowen1,2,5 (AUTHOR) zhubowen@westlake.edu.cn
Publikováno v:
Advanced Science. 10/23/2024, Vol. 11 Issue 39, p1-11. 11p.
Autor:
Li J; Department of Chemical and Biological Engineering, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, 999077, P. R. China.; Department of Biomedical Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, 999077, P. R. China., Wijaya LNA; Department of Biomedical Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, 999077, P. R. China., Jang DW; Department of Biomedical Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, 999077, P. R. China., Hu Y; Department of Chemical and Biological Engineering, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, 999077, P. R. China., You J; Department of Chemical and Biological Engineering, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, 999077, P. R. China., Cai Y; Department of Chemical and Biological Engineering, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, 999077, P. R. China., Gao Z; Department of Biomedical Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, 999077, P. R. China., Mi Y; Department of Chemical and Biological Engineering, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, 999077, P. R. China., Luo Z; Department of Chemical and Biological Engineering, William Mong Institute of Nano Science and Technology and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, 999077, P. R. China.
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany) [Small] 2024 Dec 10, pp. e2408961. Date of Electronic Publication: 2024 Dec 10.
Autor:
Wijesingha M; Department of Nanoscience, Joint School of Nanoscience & Nanoengineering (JSNN), University of North Carolina at Greensboro, Greensboro, NC 27401, USA., Mo Y; Department of Nanoscience, Joint School of Nanoscience & Nanoengineering (JSNN), University of North Carolina at Greensboro, Greensboro, NC 27401, USA.
Publikováno v:
Chemphyschem : a European journal of chemical physics and physical chemistry [Chemphyschem] 2024 Dec 06, pp. e202400908. Date of Electronic Publication: 2024 Dec 06.
Autor:
Choi C; Center for Quantum Technology, Korea Institute of Science and Technology, Seoul, 02792, Republic of Korea., Lee GJ; School of Electrical and Electronics Engineering, Pusan National University, Busan, 46241, Republic of Korea., Chang S; School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea., Song YM; School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea.; AI Graduate School, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea.; Department of Semiconductor Engineering, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea., Kim DH; Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea.; School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul, 08826, Republic of Korea.
Publikováno v:
Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Nov; Vol. 36 (48), pp. e2412252. Date of Electronic Publication: 2024 Oct 14.
Autor:
Gao J; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore., Chien YC; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore., Li L; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore., Lee HK; Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Singapore., Samanta S; Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Singapore., Varghese B; Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Singapore., Xiang H; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore., Li M; Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Singapore., Liu C; Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Singapore., Zhu Y; Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Singapore., Chen L; Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Singapore., Ang KW; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore.
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany) [Small] 2024 Nov; Vol. 20 (47), pp. e2404711. Date of Electronic Publication: 2024 Aug 16.
Autor:
Mallick S; Central Characterization Department, CSIR-Institute of Minerals and Materials Technology, Bhubaneswar, Odisha, 751013, India.; Academy of Scientific & Innovative Research, Ghaziabad, 201002, India., Majumder S; Indian Institute of Science Education and Research, Dr Homi Bhabha Road, Pashan, Pune, Maharashtra, 411008, India., Maiti P; Institute of Physics, Sachivalaya Marg, Bhubaneswar, Odisha, 751005, India., Kesavan K; Central Characterization Department, CSIR-Institute of Minerals and Materials Technology, Bhubaneswar, Odisha, 751013, India.; Academy of Scientific & Innovative Research, Ghaziabad, 201002, India., Rahman A; Indian Institute of Science Education and Research, Dr Homi Bhabha Road, Pashan, Pune, Maharashtra, 411008, India., Rath A; Central Characterization Department, CSIR-Institute of Minerals and Materials Technology, Bhubaneswar, Odisha, 751013, India.; Academy of Scientific & Innovative Research, Ghaziabad, 201002, India.
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany) [Small] 2024 Nov; Vol. 20 (46), pp. e2403225. Date of Electronic Publication: 2024 Aug 03.
Autor:
Gao B; Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China., Wang W; Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China., Meng Y; Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China., Du C; Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China.; Qingyuan Innovation Laboratory, Quanzhou, 362801, China., Long Y; Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China., Zhang Y; Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China., Shao H; Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China., Lai Z; College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China., Wang W; Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China., Xie P; Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China., Yip S; Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816-8580, Japan., Zhong X; Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China.; City University of Hong Kong Matter Science Research Institute (Futian, Shenzhen), Shenzhen, 518048, China.; Nanomanufacturing Laboratory (NML), City University of Hong Kong Shenzhen Research Institute, Shenzhen, 518057, China., Ho JC; Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China.; Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816-8580, Japan.; State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong SAR, 999077, China.
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany) [Small] 2024 Oct; Vol. 20 (43), pp. e2402217. Date of Electronic Publication: 2024 Jun 25.
Autor:
V. BRACCINI, A. GUREVICH, M. C. JEWELL, C. B. EOM, D. C. LARBALESTIER, A. POGREBNYAKOV, Y. CUI, B. T. LIU, Y. F. HU, J. M. REDWING, QI LI, X. X. XI, R. K. SINGH, R. GANDIKOTA, J. KIM, B. WILKENS, N. NEWMAN, J. ROWELL, B. MOECKLY, V. FERRANDO, C. TARANTINI, D. MARR, M. PUTTI, C. FERDEGHINI, E. HAANAPPEL, VAGLIO, RUGGERO
We investigated the effect of alloying on the upper critical field Hc2 for 12 MgB2 films, in which disorder was introduced by growth, carbon doping or He-ion irradiation, finding a significant Hc2 enhancement in C-alloyed films, and an anomalous upwa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3730::d9002cd2add1e0098ddddf2795c1bd1c
http://hdl.handle.net/11588/112432
http://hdl.handle.net/11588/112432
