Zobrazeno 1 - 10
of 324
pro vyhledávání: '"J. M. Poate"'
Autor:
K. Saadatmand, J. M. Poate
Publikováno v:
Review of Scientific Instruments. 73:868-872
Ion beam technologies, in particular ion implantation, have had a profound effect on the development of Si integrated circuits. We review the pertinent history of ion source and machine development within the constraints of Moore’s law. For ion sou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31c674958c28e500780be26d5fd53295
https://doi.org/10.1063/1.1428782
https://doi.org/10.1063/1.1428782
Publikováno v:
Journal of Applied Physics. 86:1221-1225
The dose dependence of as-implanted damage and the density of threading dislocations formed after MeV implants into Si is measured. The role of the damage and amorphization in the evolution of dislocation microstructure is assessed. As-implanted dama
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a483284962a1ec0a48d5bb8d46c8cc1
https://doi.org/10.1063/1.370874
https://doi.org/10.1063/1.370874
Autor:
J. M. Poate, D. C. Jacobson, D. J. Eaglesham, James Williams, Jennifer Wong-Leung, J. Sapjeta
Publikováno v:
Journal of Applied Physics. 83:580-584
We report on the precipitation kinetics of Fe contamination at Si–SiO2 interfaces during dry oxidation at 900 °C. Transmission electron microscopy (TEM) and atomic force microscopy are used to monitor the interface roughness and precipitate densit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d2efdc25c7603da6eb6415c847efd8c
https://doi.org/10.1063/1.366643
https://doi.org/10.1063/1.366643
Publikováno v:
Journal of Applied Physics. 82:583-588
We have determined the perturbance in the silicon vacancy concentration induced by the presence of TiSi2 films. Antimony in silicon doping superlattices was employed as a vacancy detector. Under all conditions studied (deposited titanium thickness 4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8d1ad42aa8db223848235ebdba5b64b
https://doi.org/10.1063/1.365619
https://doi.org/10.1063/1.365619
Publikováno v:
Journal of Applied Physics. 82:120-125
We present a quantitative study of the evolution of point defects into clusters and extended defects in ion-implanted Si. Deep level transient spectroscopy (DLTS) measurements are used to identify and count the electrically active defects in the dama
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd35727c9601329315c0de4c7883ce98
https://doi.org/10.1063/1.365583
https://doi.org/10.1063/1.365583
Autor:
Eric Chason, O. W. Holland, J. M. Poate, James W. Mayer, Michael I. Current, Charles W. Magee, S. T. Picraux, Al F. Tasch, John Melngailis, Mark E. Law, T. Diaz de la Rubia, J. O. Borland, D. J. Eaglesham
Publikováno v:
Journal of Applied Physics. 81:6513-6561
General trends in integrated circuit technology toward smaller device dimensions, lower thermal budgets, and simplified processing steps present severe physical and engineering challenges to ion implantation. These challenges, together with the need
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f2d24832e8568c10a8e433c4b649d24
https://doi.org/10.1063/1.365193
https://doi.org/10.1063/1.365193
Autor:
G. H. Gilmer, Dale Conrad Jacobson, H. S. Luftman, D. J. Eaglesham, Peter Stolk, T. E. Haynes, H.-J. Gossmann, Conor S. Rafferty, Martín Jaraíz, J. M. Poate
Publikováno v:
Journal of Applied Physics. 81:6031-6050
Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, transmission electron microscopy measurements of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f0c7ead5b7d204ac879ffb85e2bc951
https://doi.org/10.1063/1.364452
https://doi.org/10.1063/1.364452
Autor:
D. J. Eaglesham, Dale Conrad Jacobson, Aditya Agarwal, J. M. Poate, T.E. Haynes, H.-J. Gossmann
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 120:1-4
Recent results on extended defect formation after ion implantation are reviewed. Interstitial evaporation from {311} extended defects dominates transient diffusion over most of the range of temperatures, times, and dopant concentrations of technologi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f77050cb265409b8fe4885e2fd4a0fc
https://doi.org/10.1016/s0168-583x(96)00470-3
https://doi.org/10.1016/s0168-583x(96)00470-3
Publikováno v:
Journal of Applied Physics. 80:2105-2112
The extended defects induced in silicon by high energy implantation (1.5 MeV B and 2.6 MeV P) have been investigated by plan‐view and cross‐sectional transmission electron microscopy studies and defect etching measurements. The threading dislocat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::639ad3c23e0b08fa84a678e47fa0b326
https://doi.org/10.1063/1.363103
https://doi.org/10.1063/1.363103
Publikováno v:
Materials Science and Engineering: B. 36:275-281
This paper presents experimental studies on the interaction between C and interstitials in crystalline Si. Boron doped Si superlattices, grown by molecular beam epitaxy, were used to detect the injection of excess Si self-interstitials (I) from near-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4beb9b2237ab6208af5c3920b8d3d794
https://doi.org/10.1016/0921-5107(95)01273-7
https://doi.org/10.1016/0921-5107(95)01273-7