Zobrazeno 1 - 10
of 68
pro vyhledávání: '"J. M. Moison"'
Publikováno v:
Journal of Electronic Materials. 26:L9-L12
When AIGalnAs laser structures are grown by molecular beam epitaxy on InP, the substrate deoxidation procedure is found to influence the quality of the structure: the laser threshold current densities are found to be low and reproducible when P2 is u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f948497ddd4b0ac536821bae228ad40b
https://doi.org/10.1007/s11664-997-0122-8
https://doi.org/10.1007/s11664-997-0122-8
Autor:
Jean-Michel Gérard, N. Lebouché, F. Houzay, L. Leprince, F. Barthe, J. M. Moison, J. Y. Marzin
Publikováno v:
Applied Surface Science. 92:526-531
Spontaneous patterning of strained deposits can be put to use for fabricating quantum dots. We evaluate this technique in the case of InAs GaAs . It is shown that the requirements for optoelectronic devices (dot size, homogeneity, optical yield, etc.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0b086081fda697d6cc40f9abecb1270
https://doi.org/10.1016/0169-4332(95)00289-8
https://doi.org/10.1016/0169-4332(95)00289-8
Publikováno v:
Materials Science and Engineering: B. 37:8-16
After illustrating the excellent optical quality of individual InAs/GaAs quantum boxes obtained by self-organized molecular beam epitaxial growth, we show that optical studies also give a unique insight on the nucleation and growth processes of InAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d178c96a6e36c16e17263cf18862136
https://doi.org/10.1016/0921-5107(95)01450-0
https://doi.org/10.1016/0921-5107(95)01450-0
Publikováno v:
Journal of Crystal Growth. 150:351-356
By studying the optical properties of highly strained InAs/GaAs multilayers as a function of the deposited quantity of InAs, a high resolution probing of the change from two-dimensional to three-dimensionnal morphology of the InAs layers has been per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2f801fcabef8cd0b1122ae7605e0540
https://doi.org/10.1016/0022-0248(95)80234-4
https://doi.org/10.1016/0022-0248(95)80234-4
Publikováno v:
Physical Review B. 46:7923-7926
Photoemission measurements at the InAs/GaAs (001) interfaces following insertion of interfacial silicon reveal large core-level shifts. For InAs-on-GaAs junctions, Si-induced potential steps across the interface, up to 0.2 eV for one monolayer of Si,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4ea4880894924d99966e832047b5cf9
https://doi.org/10.1103/physrevb.46.7923
https://doi.org/10.1103/physrevb.46.7923
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:2172-2177
GaAs (100) covered with its native oxides is exposed to increasing doses of low energy atomic hydrogen in order to test the possibility of using it for surface cleaning at moderate temperatures. Hydrogen molecules are dissociated using a hot filament
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7d6cf8468eccea3fc480f60f526421d
https://doi.org/10.1116/1.578000
https://doi.org/10.1116/1.578000
Publikováno v:
Surface Science. :902-908
The (100) surface of InP covered with its native oxides has been exposed to increasing doses of atomic hydrogen and studied by surface-sensitive techniques. Carbon and oxygen coverages which cannot be desorbed by thermal cleaning can be completely re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40261386e2911cafe74d543fdc064301
https://doi.org/10.1016/0039-6028(92)91367-k
https://doi.org/10.1016/0039-6028(92)91367-k
Publikováno v:
Physical Review B. 45:6275-6278
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31c0fb5c627e38bd234836dfca595fbe
https://doi.org/10.1103/physrevb.45.6275
https://doi.org/10.1103/physrevb.45.6275
Differences in the SiO2/InP interfaces obtained by thermal and UV-induced chemical vapour deposition
Publikováno v:
Applied Surface Science. :789-794
The interface between InP covered by its native oxide and SiO2 is built up the thermal or UV-assisted chemical vapour deposition from silane precursor gas. It is analyzed in situ by X-ray photoemission spectroscopy in an ultra-high-vacuum environment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fec6457665da9b220bd0a90ec927dc8
https://doi.org/10.1016/0169-4332(92)90339-y
https://doi.org/10.1016/0169-4332(92)90339-y
Publikováno v:
Applied Surface Science. 54:445-452
Surface-sensitive multiple internal reflection absorption infrared spectroscopy has been applied to the study of the growth of SiO 2 films under far ultraviolet illumination. Spectra provide evidence for a previously unreported Si-H absorption peak o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::468353672ea788c5a87185dd62a1871e
https://doi.org/10.1016/0169-4332(92)90085-c
https://doi.org/10.1016/0169-4332(92)90085-c