Zobrazeno 1 - 10
of 69
pro vyhledávání: '"J. M. Meese"'
Publikováno v:
Laser and Particle Beams. 16:509-524
The concept and experimental results of a microwave-excited elliptical excimer lamp are presented in this paper. The plasma excimer photons are excited at one focus, and the absorber is placed at the second focus. Two elliptical microwave cavities wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ab56ccdd39153897e76700bd38570e5
https://doi.org/10.1017/s0263034600011319
https://doi.org/10.1017/s0263034600011319
Publikováno v:
Scopus-Elsevier
Diamond films have been grown by hot filament chemical vapor deposition (CVD) on mirror-polished positively biased Si substrates. Very smooth films a few micrometers thick were obtained in only 30 min. SEM, x-ray diffraction patterns, and Raman were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1762f370ed8de3e096b72d22d7633769
https://doi.org/10.1557/jmr.1995.2011
https://doi.org/10.1557/jmr.1995.2011
Autor:
E. M. Charlson, J. M. Meese, Mark A. Prelas, M. F. Odeh, E. J. Charlson, A. H. Khan, T. Stacy, J. L. Wragg, Galina Popovici
Publikováno v:
Journal of Materials Science. 29:4314-4318
Aluminium nitride films were grown on silicon substrates using the chemical vapour deposition (CVD) method. The properties of the films were studied by scanning electron microscopy (SEM), atomic force microscope (AFM) measurements, X-ray diffraction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45adf0b09f1bf857256b33ea3a5a8b25
https://doi.org/10.1007/bf00414216
https://doi.org/10.1007/bf00414216
Publikováno v:
IEEE Journal of Quantum Electronics. 30:1234-1240
We present our optimization of a normally off refractive GaAs/Al/sub x/Ga/sub 1-x/As multiple-quantum-well (MQW) reflection modulator with respect to the on/off reflectance change, on/off contrast ratio, and operating voltage. We use optical transfer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1267b649beb3f3fa329537ab21739c08
https://doi.org/10.1109/3.303686
https://doi.org/10.1109/3.303686
Publikováno v:
Journal of Applied Physics. 75:2618-2627
A systematic study of the refractive index and absorption coefficient of GaAs/AlxGa1−xAs quantum wells as a function of electric field is presented. In this model, the effective‐mass mismatches between GaAs and AlxGa1−xAs have been considered.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0be1d24771f3331ff31d970fe384ad3b
https://doi.org/10.1063/1.356237
https://doi.org/10.1063/1.356237
Autor:
Chih‐Hsiang Lin, J. M. Meese
Publikováno v:
Journal of Applied Physics. 74:6341-6348
An analytical, semiempirical model is presented for the optical properties of AlxGa1−xAs for photon energies from 1.2 to 6 eV. For GaAs, the discrepancy between the calculated refractive index and the experimental data is about 0.003 at 1.8 eV, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4edacb5ace75f1cbec295da44707eca
https://doi.org/10.1063/1.355157
https://doi.org/10.1063/1.355157
Publikováno v:
Laser and Particle Beams. 11:65-79
Diamond technology is a major area of worldwide semiconductor research. It has been said that the current status of diamond semiconductor technology is similar to that of silicon technology in 1960. Most of the research on diamond is in high quality
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::329bf33dd750ff3ebe40ea05c11a8302
https://doi.org/10.1017/s0263034600006923
https://doi.org/10.1017/s0263034600006923
Publikováno v:
Journal of Applied Physics. 81:3644-3646
Phosphorus doped polycrystalline diamond films were grown by hot-filament chemical vapor deposition using trimethyl phosphite as the doping source. Phosphorus incorporation into the diamond films was established using secondary ion mass spectroscopy.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b7e9b98c6b15ee9d68547763395a3be
https://doi.org/10.1063/1.365483
https://doi.org/10.1063/1.365483
Publikováno v:
Applied Physics Letters. 66:1222-1224
A normal‐incident normally on GaAs/AlAs multiple‐quantum well Fabry–Perot transmission modulator is reported. The fabricated modulator achieves ON/OFF transmittance changes larger than 30% and ON/OFF contrast ratios larger than 7.4 at the wavel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f1e34f015e2c6824ad0e5e59b0d1e71
https://doi.org/10.1063/1.113243
https://doi.org/10.1063/1.113243
Publikováno v:
Applied Physics Letters. 65:2827-2829
Etching of hot‐filament, chemical vapor deposited, diamond thin films utilizing low energy ion irradiation was investigated. The films used in this study were boron doped polycrystalline diamond, deposited on p‐type (100) oriented silicon substra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d33bf7d8c875a2eb795b9a81db2c9ef5
https://doi.org/10.1063/1.112578
https://doi.org/10.1063/1.112578