Zobrazeno 1 - 10
of 18
pro vyhledávání: '"J. M. Martinez-Duart"'
Publikováno v:
Microelectronic Engineering. :655-659
N-type and p-type Porous Silicon (PSi) have been observed by Scanning Electron Micrograph (SEM) and characterised by Photoluminescence (PL). The porous n-type silicon obtained under illumination (photoelectrochemical etching), consists of a layer of
Publikováno v:
Materials Science Forum. :527-534
Autor:
J. M. Martinez-Duart, Cristina Gómez-Aleixandre, J. M. Albella, O. Sánchez-Garrido, Luis Vázquez
Publikováno v:
Surface and Coatings Technology. 70:163-174
The deposition problems of diamond and cubic boron nitride (c-BN) by chemical vapour deposition techniques are reviewed, with major emphasis on the nucleation and reaction mechanisms. A discussion is made of the main deposition parameters ( i.e. gas
Publikováno v:
Surface and Interface Analysis. 15:440-446
Tantalum silicide films of ∼200 nm thick and composition TaSi2 were obtained by co-sputtering in a Varian 3120 S-gun magnetron system. The films were then introduced in an AES spectrometer and bombarded with Ar+ ions of different energies in order
Autor:
J. M. Martinez-Duart, A. M. Baró, José M. Gómez-Rodríguez, V. P. Parkhutik, J. M. Albella, V. I. Shershulsky
Publikováno v:
Applied Physics Letters. 62:366-368
A morphology of pores formed in silicon by its anodic polarization in a hydrofluoric acid has been studied using scanning tunneling microscopy (STM). The results obtained show that the pore structure, as yielded from the STM measurements, may be orde
Publikováno v:
Optical Properties of Low Dimensional Silicon Structures ISBN: 9789401049276
Two theoretical models allowing to simulate morphological features of porous layers formed by electrochemical anodization of semiconductors are reviewed and their suitability for practical applications in forming the porous silicon layers is discusse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::840dc74a0723ab04d7231e2568c1beed
https://doi.org/10.1007/978-94-011-2092-0_6
https://doi.org/10.1007/978-94-011-2092-0_6
Publikováno v:
ChemInform. 21
Publikováno v:
Journal of Physics E: Scientific Instruments. 10:61-65
A general method is presented to study the response function (first harmonic) of velocity analysers to an arbitrary energy distribution N(E), as occurs in Auger electron spectrometry. The method is based upon finding the response to a delta function
Publikováno v:
Surface and Interface Analysis. 12:334-338
Palladium silicide films were obtained after annealing thermally evaporated Pd layers on p-type Si substrates. The silicide layers formed at different temperatures were characterized by Rutherford backscattering (RBS) and Auger electron spectroscopy
Publikováno v:
Journal of Applied Electrochemistry. 11:273-279
MnO2 samples have been prepared by the pyrolytic decomposition of manganese nitrate in different atmospheres: dry air and air saturated with water vapour. The influence of the atmosphere on the kinetics of the manganese nitrate decomposition and on s