Zobrazeno 1 - 10
of 44
pro vyhledávání: '"J. M. M. de Nijs"'
Publikováno v:
Solid-State Electronics. 46:1775-1785
We contribute with this paper to the understanding of positive charge build up upon hole injection in SiO 2 known to be an important degradation process. Our results are in agreement with a recently proposed model of charge generation [4,6] . We have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d63e66f47e95b4d0ffc117fd6643647d
https://doi.org/10.1016/s0038-1101(02)00150-8
https://doi.org/10.1016/s0038-1101(02)00150-8
Publikováno v:
Microelectronic Engineering. 59:497-501
We have studied SIMOX buried oxide samples implanted with D + (10 14 –10 15 cm −2 ) or annealed in D 2 (300–500 kPa at 1073 K). Thermal desorption spectrometry (TDS) performed on these samples after removal of the top Si layer shows two main pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::143ac5c493ded9249154cd579ec8e5ff
https://doi.org/10.1016/s0167-9317(01)00664-5
https://doi.org/10.1016/s0167-9317(01)00664-5
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 178:287-290
The buried oxide (BOX) layer of SIMOX samples was implanted with 20–30 keV D+ ion implantation at doses from 1014 to 10 16 cm −2 . Other samples were exposed to pure deuterium gas (0–1 MPa) at temperatures in the range 800–1100 K. Thermal des
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3a73a1f8667f21567e142d689d64c6a
https://doi.org/10.1016/s0168-583x(00)00484-5
https://doi.org/10.1016/s0168-583x(00)00484-5
Publikováno v:
Materials Science and Engineering: B. 73:77-81
Commercial wafers of silicon implanted with oxygen (SIMOX), with a 190 nm silicon top layer and 360 nm buried oxide layer, were analysed using positron beam spectroscopy. Depth profiles of defects have been obtained in the depth range from 0 to 2 μm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6efbd8998b45a3b8a46bac64017631bf
https://doi.org/10.1016/s0921-5107(99)00438-9
https://doi.org/10.1016/s0921-5107(99)00438-9
Publikováno v:
Journal of Applied Physics, 85(3), 1907-1910. AMER INST PHYSICS
We have fabricated nanometer width Co/Si metal lines on Si(100) surfaces by ultrahigh-vacuum scanning tunneling microscopy (UHVSTM) based nanolithography on the hydrogen-passivated surface, combined with vapor deposition of Co at room temperature and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8df959fa4e65ea478c1261571cf47b5a
https://research.rug.nl/en/publications/06a7262a-dbbd-4fa0-9a30-e885d3ea0ee7
https://research.rug.nl/en/publications/06a7262a-dbbd-4fa0-9a30-e885d3ea0ee7
Publikováno v:
Microelectronic Engineering. 36:35-42
In this paper we discuss the potential of positrons for the study of defects in the MOS system. It is shown that Doppler broadening measurements of the positron annihilation radiation reveals properties not detected by conventional techniques such as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73c84abcd894c698d7b2276cdd246ee0
https://doi.org/10.1016/s0167-9317(97)00011-7
https://doi.org/10.1016/s0167-9317(97)00011-7
Publikováno v:
Applied Surface Science. 116:192-197
Doppler-broadening measurements can be improved by using a second Ge-detector for the coincidence detection of the second annihilation photon. The coincidence condition in combination with an energy relation results in a reduction of the background b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::caf134116b69120ecb5e641a9d655a8a
https://doi.org/10.1016/s0169-4332(96)01053-7
https://doi.org/10.1016/s0169-4332(96)01053-7
Publikováno v:
Journal of Applied Physics. 81:1943-1955
This paper describes a study of the effect of an external electric field on the behavior of positrons in metal-oxide-silicon (MOS) systems. Doppler broadening measurements of the annihilation radiation were performed on capacitors with identical ther
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::877dcd8ee86c9ef22e50339df318a03f
https://doi.org/10.1063/1.364050
https://doi.org/10.1063/1.364050
Publikováno v:
Journal of Applied Physics. 79:9029-9036
An improved approach is presented for the analysis of positron beam Doppler broadening data. Instead of analyzing the energy‐dependent shape parameter, the so‐called S(E) data, we combined the shape S(E) and wing W(E) data by plotting them as a t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ec358420de3441d198dc436aad3b36c
https://doi.org/10.1063/1.362635
https://doi.org/10.1063/1.362635
Publikováno v:
Journal of Applied Physics. 79:1505-1510
We describe a study of the generation of slow interface states (time constants ≳40 s) by vacuum ultraviolet irradiation (Kr lamp, hν=10 eV) on metal–oxide–silicon samples with approximately 30 nm of thermally grown SiO2 and a transparent alumi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::865c1f1852dc99a75447f3b0ccf206cb
https://doi.org/10.1063/1.360992
https://doi.org/10.1063/1.360992