Zobrazeno 1 - 5
of 5
pro vyhledávání: '"J. M. Lannon"'
Publikováno v:
IEEE Transactions on Electron Devices. 59:1941-1947
High-density area-array 3-D interconnects are a key enabling technology for 3-D integrated circuits. This paper presents results of the fabrication and testing of large 640 by 512 area arrays of Cu/Sn-Cu interconnects positioned on 10-μ centers. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7825aba0d9ceaabefaa815867ffb4ec1
https://doi.org/10.1109/ted.2012.2193404
https://doi.org/10.1109/ted.2012.2193404
Publikováno v:
Journal of Applied Physics. 77:3823-3830
Ultrahigh‐vacuum surface studies of hydrogen ion interactions with silicon carbide thin films were performed to provide new insights into the mechanisms of diamond thin‐film nucleation. These experiments were carried out at room temperature using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41b89b515018763d88f5db7307516611
https://doi.org/10.1063/1.358558
https://doi.org/10.1063/1.358558
Publikováno v:
Applied Physics Letters. 73:226-228
Auger electron spectroscopy has been used as an in situ diagnostic in ultrahigh vacuum studies of diamond nucleation and growth on silicon. It is demonstrated that sp3-bonded carbon can be formed under ultrahigh vacuum conditions in the absence of ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47502988c72bacb789f66f03279edfd3
https://doi.org/10.1063/1.121763
https://doi.org/10.1063/1.121763
Publikováno v:
MRS Proceedings. 690
Ion beam sputter deposition (IBSD) techniques for deposition of giant magnetoresistance (GMR) films have been studied using an automated IBSD system designed and built in-house. We have studied the properties of Fe/Cr multilayers deposited using eith
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acb5325a4358b4e5bdd818a399c75bc0
https://doi.org/10.1557/proc-690-f9.12
https://doi.org/10.1557/proc-690-f9.12
Publikováno v:
MRS Proceedings. 339
Studies of diamond heteroepitaxy on silicon indicate that C-C surface species act as nucleation precursors. We have investigated the conversion of the Si(100) 2×1 surface to SiC using C2H4 to obtain an understanding of how C-C species may be formed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d501340d2c1101ab64409eb5ad29fd93
https://doi.org/10.1557/proc-339-63
https://doi.org/10.1557/proc-339-63