Zobrazeno 1 - 10
of 17
pro vyhledávání: '"J. M. Hergenrother"'
Publikováno v:
Solid-State Electronics. 46:939-950
We have fabricated and demonstrated a new device called the vertical replacement-gate (VRG) MOSFET. This is the first MOSFET ever built in which: (1) all critical transistor dimensions are controlled preciselywithout lithographyand dryetch, (2) the g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29186b6e6e23b56e3495bd5ec09459c5
https://doi.org/10.1016/s0038-1101(02)00025-4
https://doi.org/10.1016/s0038-1101(02)00025-4
Publikováno v:
Physical Review B. 57:4591-4598
We have studied single-electron transistors with island lengths of 2, 10, 20, 30, and 40 mm and with high-resistance tunnel junctions to minimize the effects of cotunneling and electron self-heating. With longer islands, there is a marked reduction o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::659c044fcbebf15d78d2829133a47ebf
https://doi.org/10.1103/physrevb.57.4591
https://doi.org/10.1103/physrevb.57.4591
Publikováno v:
Czechoslovak Journal of Physics. 46:3139-3145
We have fabricated single-electron tunneling transistors in which the central island is an aluminum grain with radius in the range 2–10 nm. The corresponding spacing between electron-in-a-box levels is in the range ∼0.01 to ∼1 meV. Using tunnel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a22fed66b013a007644b0e0fd00f7f5
https://doi.org/10.1007/bf02548121
https://doi.org/10.1007/bf02548121
Publikováno v:
Physical Review B. 53:3543-3549
We present extensive experimental data on the gate-charge-periodic current I(${\mathit{Q}}_{\mathit{o}}$) through a single-electron transistor as a function of the applied magnetic field. This device consists of a mesoscopic superconducting island wh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af4a8c1f9fcc8945c2f9002b269f4d5f
https://doi.org/10.1103/physrevb.53.3543
https://doi.org/10.1103/physrevb.53.3543
Publikováno v:
IEEE Transactions on Appiled Superconductivity. 5:2604-2607
We have measured single-electron tunneling transistors with superconducting islands and conclude that they may be used as ultrasensitive detectors of microwave radiation for frequencies /spl ges/80 GHz. These devices contain a small superconducting A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc1375d7e12d900a0108f2d0a21e20e9
https://doi.org/10.1109/77.403123
https://doi.org/10.1109/77.403123
Publikováno v:
Physical Review B. 51:9407-9410
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c72805a4018081942a9470ca5f11b494
https://doi.org/10.1103/physrevb.51.9407
https://doi.org/10.1103/physrevb.51.9407
Publikováno v:
Physica B: Condensed Matter. 203:327-339
We present extensive experimental data concerning charge transport and photon-assisted tunneling in the NSN single-electron transistor. At subgap bias voltages and low temperatures, the current through this system arises from a combination of Andreev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::500914e8a3f95817b42b17a3a5510013
https://doi.org/10.1016/0921-4526(94)90077-9
https://doi.org/10.1016/0921-4526(94)90077-9
Publikováno v:
Physical Review B. 47:11599-11602
As a consequence of electron pairing, the free energy of a small superconducting island at low temperatures depends on whether it contains an even or odd number of electrons, i.e., on the parity of the total number of electrons. This produces a 2e pe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e00d457ee00c59eae516f14cfc6cd0b
https://doi.org/10.1103/physrevb.47.11599
https://doi.org/10.1103/physrevb.47.11599
Publikováno v:
Physical Review B. 47:1145-1148
We have measured two-dimensional arrays of Josephson junctions where the charging energy ${\mathit{E}}_{\mathit{c}}$ dominates the Josephson coupling energy ${\mathit{E}}_{\mathit{J}}$ by as much as a factor of 33. In this system, an added charge pol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::46f939859a3ed390880cd15ec539127d
https://doi.org/10.1103/physrevb.47.1145
https://doi.org/10.1103/physrevb.47.1145
Publikováno v:
Physical Review Letters. 69:1997-2000
We present experimental current-voltage (I-V) measurements on an Al-${\mathrm{Al}}_{2}$${\mathrm{O}}_{3}$-Al single-electron tunneling transistor in the superconducting state. We observe a variety of features which result from Cooper-pair tunneling p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6013af15efc4bb8bd3181881ddcc25ef
https://doi.org/10.1103/physrevlett.69.1997
https://doi.org/10.1103/physrevlett.69.1997