Zobrazeno 1 - 10
of 16
pro vyhledávání: '"J. M. Heddleson"'
Autor:
T. Abe, S. R. Weinzierl, M. Pawlik, R. J. Hillard, J. M. Heddleson, P.C. Karulkar, P. Rai-Choudhury
Publikováno v:
Microelectronic Engineering. 19:827-832
It is shown that bonded SOI structures can be qualified for device fabrication through a series of eletrical measurements without fabrication of special test strucutres. The electrical methods include MOSCV, MOSIV, point contact MOS transistor (PCMOS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3348c58181e0cec1bb24f2e86a882bad
https://doi.org/10.1016/0167-9317(92)90554-5
https://doi.org/10.1016/0167-9317(92)90554-5
Publikováno v:
Applied Surface Science. :237-245
A technique and precision instrumentation developed for rapid characterization of dielectric layers is described. It involves the use of a kinematically stable, flattened probe placed directly on the dielectric layer formed on top of a conducting sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2f4f8631a00083351ab70a53dad5edf
https://doi.org/10.1016/0169-4332(91)90337-j
https://doi.org/10.1016/0169-4332(91)90337-j
Publikováno v:
Journal of The Electrochemical Society. 137:1960-1964
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13f901c9e4aab733959dff024e7dee49
https://doi.org/10.1149/1.2086839
https://doi.org/10.1149/1.2086839
Publikováno v:
1991 IEEE International SOI Conference Proceedings.
The authors demonstrate the effect of the buried oxide on the spreading resistance profile (SRP) by investigating bonded SOI (silicon-on-insulator) samples exposed to X-ray radiation. The results show that the effect is a manifestation of the field e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f0ecbaacccbeef13a296a0a9cc5f699
https://doi.org/10.1109/soi.1991.162877
https://doi.org/10.1109/soi.1991.162877
Publikováno v:
1990 IEEE SOS/SOI Technology Conference. Proceedings.
The buried oxide in SOI structures influences the electrical parameters, reliability, and the radiation hardness of devices fabricated in the superficial silicon film. Hence, along with advances in SOI (silicon-on-insulator) wafer fabrication, charac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33505e79afaf0d0fb3d00872824688d7
https://doi.org/10.1109/sossoi.1990.145752
https://doi.org/10.1109/sossoi.1990.145752
Publikováno v:
Euro III-Vs Review. 3:31-33
In the first part of this two part article by Solid State Measurements, Inc., Pittsburgh, PA, USA, the point contact current voltage (PCIV) technique for characterizing III–V semiconductors was introduced. This technique involves stepping specially
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a50038bfeb036d3bbe0d2a4569cb6998
https://doi.org/10.1016/0959-3527(90)90203-6
https://doi.org/10.1016/0959-3527(90)90203-6
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:317
Silicides are increasingly being used as diffusion sources to form the ultra‐shallow, low resistance source‐drain junctions, which will be needed in the next generation of ultra‐large‐scale integration technology. The silicide thickness and i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0b234c9802658d5cb20605c23aec9df
https://doi.org/10.1116/1.587160
https://doi.org/10.1116/1.587160
Autor:
P. Rai‐Choudhury, Roger Le Dudal, J. M. Heddleson, S. R. Weinzierl, R. J. Hillard, R. G. Mazur
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:336
The precise control of ion implants for threshold voltage adjustment requires formation of ultra‐shallow electrically active carrier profiles, which begin at the Si–SiO2 interface. Obtaining accurate and precise carrier density profiles near the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57b835807a60b1518dd47d66c15abd8d
https://doi.org/10.1116/1.587121
https://doi.org/10.1116/1.587121
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:322
Advanced spreading resistance measurements and analysis techniques are used to determine the dopant profiles in two ultra‐shallow silicon metal–oxide–semiconductor source/drain structures which were germanium preamorphized prior to implant. Alt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b0ab013a04d528aee626d17918e6b34
https://doi.org/10.1116/1.587161
https://doi.org/10.1116/1.587161