Výsledky vyhledávání - "J. M. Fastenau"

Large format multi-wafer production of LWIR photodetector structures on 150mm GaSb substrates by MBE

Autor: Scott A. Nelson, Michael Kattner, Becky Martinez, J. M. Fastenau, Dmitri Lubyshev, Mark J. Furlong, Phillip Frey, Amy W. K. Liu

Publikováno v: Infrared Technology and Applications XLVI.

As GaSb based LWIR nBn detector structures have progressed from development into production, the standard substrates have been 76.2 and 100 mm in diameter. Additionally, production growths on 125 mm substrates are gaining popularity. To meet demands

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7028bee7b0465430dd7ec260470e006a
https://doi.org/10.1117/12.2559403

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T2SL mid- and long-wave infrared photodetector structures grown on (211)B and (311)A GaSb substrates

Autor: Michael Kattner, J. M. Fastenau, Becky Martinez, Amy W. K. Liu, Mark J. Furlong, Scott A. Nelson, Phillip Frey, Dmitri Lubyshev

Publikováno v: Infrared Technology and Applications XLV.

We recently evaluated the optical and electric characteristics of mid-wave photodetector (PD) diodes grown on high-index substrates. Preliminary results indicate that substrate orientation and surface polarity can modify PD parameters such as photolu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3b1c6712a68bfc999ee543488de5b600
https://doi.org/10.1117/12.2521066

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GaSb-based infrared photodetector structures grown on Ge-Si substrates via metamorphic buffers

Autor: Phillip Frey, Doug Burrows, Stuart A. Edwards, Amy W. K. Liu, J. M. Fastenau, Michael Kattner, Mark J. Furlong, Kelly Patnaude, Scott A. Nelson, Kim Beech, Jason Bundas, Joe Zeng, Mani Sundaram, Rich Dennis, Axel Reisinger, Dmitri Lubyshev, Aled Morgan, Matt Fetters, Ross Faska

Publikováno v: Infrared Technology and Applications XLV.

GaSb-based infrared (IR) photodetector technology progression is toward larger-format focal plane arrays (FPAs). This requires a performance-based and cost-based manufacturing process on larger diameter substrates for improved throughput, volume, and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::20017deddaa48b61e0757fc97a0555ad
https://doi.org/10.1117/12.2521055

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InP-based quantum cascade lasers monolithically integrated onto silicon

Autor: Stuart A. Edwards, N G Huy, Amy W. K. Liu, Rowel Go, Matthew Suttinger, J. M. Fastenau, X. M. Fang, A. Eisenbach, M. Fetters, D. Lubyshev, M. J. Furlong, H. Krysiak, Pedro Figueiredo, Aled Morgan, Arkadiy Lyakh

Publikováno v: Optics express. 26(17)

Lasing is reported for ridge-waveguide devices processed from a 40-stage InP-based quantum cascade laser structure grown on a 6-inch silicon substrate with a metamorphic buffer. The structure used in the proof-of-concept experiment had a typical desi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4e311db8902469df4c4a7d1664ef4c2
https://pubmed.ncbi.nlm.nih.gov/30130933

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InP-based Quantum Cascade Lasers Monolithically Integrated onto Si and GaAs Substrates

Autor: A. W. K. Liu, J. M. Fastenau, Matthew Suttinger, D. Lubyshev, Rowel Go, M. J. Furlong, Pedro Figueiredo, A. Eisenbach, H. Krysiak, Arkadiy Lyakh, Jason Leshin, M. Fetters, X. M. Fang

Publikováno v: Conference on Lasers and Electro-Optics.

Operation of InP-based quantum cascade lasers (QCL) processed from structures grown on 6-inch Si and GaAs substrates with metamorphic buffers are reported. Results pave the way for the development of ultra-compact Si-based platforms comprising QcLs.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6816ee05ade5b95e01fec26506d0febd
https://doi.org/10.1364/cleo_si.2018.sf2g.4

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(Invited) Monolithic Integration of III-V As- and P-Based Devices on Si through Direct MBE Growth and Using Lattice Engineered Substrates

Autor: Dmitri Lubyshev, Amy Liu, J. M. Fastenau, Ying Wu

Publikováno v: ECS Transactions. 66:89-105

Mainstream silicon (Si) CMOS technology is finally experiencing limitations of pure Si-based material and process. For digital electronics, to extend Moore’s law, the industry increasingly is investigating alternative materials and technologies to

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a23d46c695c3c34921605a3b784cc91
https://doi.org/10.1149/06604.0089ecst

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Barrier-Engineered Arsenide–Antimonide Heterojunction Tunnel FETs With Enhanced Drive Current

Autor: Bijesh Rajamohanan, Theresa S. Mayer, J. M. Fastenau, Dheeraj Mohata, Mantu K. Hudait, Dmitri Lubyshev, Suman Datta, A. W. K. Liu

Publikováno v: IEEE Electron Device Letters. 33:1568-1570

In this letter, we experimentally demonstrate enhancement in drive current ION and reduction in drain-induced barrier thinning (DIBT) in arsenide-antimonide staggered-gap heterojunction (hetj) tunnel field-effect transistors (TFETs) by engineering th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3f2a9303ef8e3b67312c28e59ffc26cb
https://doi.org/10.1109/led.2012.2213333

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Monolithic InAs/InAlGaAs/InP quantum-dash-in-well extended-cavity laser fabricated by postgrowth intermixing

Autor: Y. Wang, H. S. Djie, B. S. Ooi, J. C. M. Hwang, X. -M. Fang, Y. Wu, J. M. Fastenau, W. K. Liu, G. T. Dang, W. H. Chang

Publikováno v: Laser Physics. 18:400-402

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::929a4527da5026dcca05fa8e5a889945
https://doi.org/10.1134/s1054660x08040075

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InGaAs/InP DHBTs with 120-nm collector having simultaneously high f/sub /spl tau//, f/sub max//spl ges/450 GHz

Autor: A.W.K. Liu, J. M. Fastenau, Z. Griffith, Xiao-Ming Fang, Mark J. W. Rodwell, Ying Wu, Dmitri Loubychev

Publikováno v: IEEE Electron Device Letters. 26:530-532

InP/In/sub 0.53/Ga/sub 0.47/As/InP double heterojunction bipolar transistors (DHBT) have been designed for increased bandwidth digital and analog circuits, and fabricated using a conventional mesa structure. These devices exhibit a maximum 450 GHz f/

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::afee1caa98c3e44c1ed3197eb1c551da
https://doi.org/10.1109/led.2005.852519

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Compressively strained InSb MOSFETs with high hole mobility for p-channel application

Autor: J. M. Fastenau, A. Ali, W. K. Liu, Dmitri Loubychev, Michael Barth, Ashish Agrawal, Suman Datta

Publikováno v: 71st Device Research Conference.

We demonstrate synthesis of p-channel InSb MOSFET with 1.9% compressive biaxial strain with outstanding room temperature and 150K Hall mobility of 680 cm2/Vs and 2,500 cm2/Vs at hole sheet density of 5x1012 /cm2 and 2.3x1012 /cm2, respectively. The i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7626900ca6e97a054a2f175bb6860d7f
https://doi.org/10.1109/drc.2013.6633775

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