Výsledky vyhledávání - "J. M. Delucca"

Pt Schottky contacts ton-GaN formed by electrodeposition and physical vapor deposition

Autor: S. A. Goodman, Suzanne E. Mohney, J. M. Delucca, F.D. Auret

Publikováno v: Journal of Applied Physics. 88:2593-2600

Electrodeposited, dc magnetron sputtered, and electron beam evaporated Pt contacts to n-GaN (n=1.5×1017 cm−3) are reported. All contacts were rectifying in the as-deposited condition, and values of the barrier height were determined by current–v

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b16bdd8336f6e8b80d32c57e7e63338a
https://doi.org/10.1063/1.1287605

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An investigation into the early stages of oxide growth on gallium nitride

Autor: Suzanne E. Mohney, C.P Kuo, S. D. Wolter, R. S. Kern, J. M. Delucca

Publikováno v: Thin Solid Films. 371:153-160

The early stages of thermal oxidation of gallium nitride epilayers in dry O 2 have been studied using surface sensitive analytical techniques and transmission electron microscopy. Deconvolution of the Ga 3d core level spectra from X-ray photoelectron

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::304977a983a221b837a9e01da2e4a68e
https://doi.org/10.1016/s0040-6090(00)00984-6

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Approaches to designing thermally stable Schottky contacts to n-GaN

Autor: Suzanne E. Mohney, J. M. Delucca, Hari S. Venugopalan, Richard J. Molnar

Publikováno v: Semiconductor Science and Technology. 14:757-761

The barrier heights of PdIn, Ni/Ga/Ni and Re Schottky contacts to n-GaN were investigated by current-voltage and capacitance-voltage measurements. Elemental Pd and Ni contacts were also investigated for comparison. In each case, the barrier heights w

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6ab2b832de63a8ad5e39e2c30d26ca8b
https://doi.org/10.1088/0268-1242/14/9/303

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Wet thermal oxidation of GaN

Autor: E. D. Readinger, J. M. Delucca, D. L. Waltemyer, Richard J. Molnar, Lucille A. Giannuzzi, S. D. Wolter, B. I. Prenitzer, Suzanne E. Mohney

Publikováno v: Journal of Electronic Materials. 28:257-260

Thermal oxidation of GaN was conducted at 700–900°C with O2, N2, and Ar as carrier gases for 525–630 Torr of H2O vapor. Upon oxidation of both GaN powders and n-GaN epilayers, the monoclinic β-Ga2O3 phase was identified using glancing angle x-r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9ce87163c0ad8caf14535910c48b45d4
https://doi.org/10.1007/s11664-999-0024-z

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Improved ohmic contact to n-type 4H and 6H-SiC using nichrome

Autor: Suzanne E. Mohney, M. J. Bozack, J. M. Delucca, Tamara Isaacs-Smith, J. Crofton, John R. Williams, E. D. Luckowski

Publikováno v: Journal of Electronic Materials. 27:330-334

Results are reported for ohmic contacts formed on n-type 4H and 6H-SiC using nichrome (80/20 weight percent Ni/Cr). The electrical characteristics of these NiCr contacts are similar to those of contacts formed on 6H-SiC using pure Ni (∼1×10−5Ω-

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::22152c36b4f0a291df86d0e1c8643afb
https://doi.org/10.1007/s11664-998-0410-y

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Study of contact resistivity, mechanical integrity, and thermal stability of Ti/Al and Ta/Al ohmic contacts to n-type GaN

Autor: Suzanne E. Mohney, J. M. Delucca, R. F. Karlicek, B. P. Luther

Publikováno v: Journal of Electronic Materials. 27:196-199

The annealing conditions and contact resistivities of Ta/Al ohmic contacts to n-type GaN are reported for the first time. The high temperature stability and mechanical integrity of Ti/Al and Ta/Al contacts have been investigated. Ta/Al (35 nm/115 nm)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9ce573f1d6d13046054b94911fbc5fb8
https://doi.org/10.1007/s11664-998-0386-7

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Morphology of nickel and nickel/gold contacts to gallium nitride

Autor: J. M. Delucca, Hari S. Venugopalan, G. E. Bulman, B. P. Luther, Suzanne E. Mohney

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:607-610

Changes in film morphology upon annealing Ni and Ni/Au contacts to GaN were examined using scanning electron microscopy and atomic force microscopy. Atomic force microscopy was performed on the GaN surface that was exposed by etching away the metal f

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::49d13d662d3430307b6019efa02e1061
https://doi.org/10.1116/1.581076

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Titanium and aluminum-titanium ohmic contacts to p-type SiC

Autor: Suzanne E. Mohney, E. D. Luckowski, J. M. Delucca, John R. Williams, L. Beyer, J. Crofton

Publikováno v: Solid-State Electronics. 41:1725-1729

Very low resistance ohmic contacts to p-type SiC were fabricated by depositing a 90-10 wt.% alloy of Al and Ti followed by a high temperature anneal of approximately 1000°C for 2 min. Specific contact resistances ranged from approximately 5 × 10 �

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::16a69cd22034fbb36811b0e80025ca38
https://doi.org/10.1016/s0038-1101(97)00168-8

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Ohmic contacts formed by electrodeposition and physical vapor deposition on p-GaN

Autor: Suzanne E. Mohney, Hari S. Venugopalan, R. F. Karlicek, J. M. Delucca

Publikováno v: Applied Physics Letters. 73:3402-3404

Electrodeposited Pt and sputtered Ni/Pt contacts to p-GaN (p=4.6×1017 cm−3) are reported and compared to sputtered Ni, Pt, and Ni/Au contacts and electron beam and thermally evaporated Ni contacts. Sequential rapid thermal annealing was employed w

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c2871bba763c2dc1ec07b0a995990eb6
https://doi.org/10.1063/1.122756

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