Zobrazeno 1 - 2
of 2
pro vyhledávání: '"J. M. De Blasi"'
Publikováno v:
Applied Physics Letters. 51:602-604
A method is reported for reducing tunnel formation in p+‐n Si, and a correlation is shown between tunnel defects and junction leakage. 11B+‐implanted Si annealed for 30 min at 900 °C in N2 and subsequently deposited with W forms a high density o
Publikováno v:
SPIE Proceedings.
A whole wafer measurement method was developed to measure submicron oxide spacer dimensions. The technique offers the capability to evaluate the glass deposition and etchback processes used to form the spacers. Lateral diffusion of implanted layers c