Zobrazeno 1 - 10
of 184
pro vyhledávání: '"J. M. Calleja"'
Autor:
J. M. Calleja
Publikováno v:
Tintas : Quaderni di Letterature Iberiche e Iberoamericane, Vol 0, Iss 0, Pp 159-171 (2014)
Nota biobibliográfica + poética + creaciones («Eco», «Poem», «Caminante», «The last poem», «Sao Paulo» y «La pirámide del siglo XXI») + cuestionario (Victoria Pineda)
Externí odkaz:
https://doaj.org/article/7bf6522e1d7145029a6c4d57b6a14c17
Publikováno v:
AIP Advances, Vol 5, Iss 9, Pp 097217-097217-7 (2015)
The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ∼330 MHz. A small but
Externí odkaz:
https://doaj.org/article/6d4a809cd268465890e487ee443f8b6a
Autor:
Lazic, S., Chernysheva, E., Gacevic, Z., van der Meulen, H. P., Calleja, E., Pardo, J. M. Calleja
The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ~330 MHz. A small but sy
Externí odkaz:
http://arxiv.org/abs/1706.03602
Autor:
Luisa González, A. K. Nowak, J. M. Calleja, José María Ripalda, Yolanda González, Daniele Sanvitto, E. Gallardo, D. Sarkar, H.P. van der Meulen
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
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Intensity correlation measurements on single InP/GaInP quantum dots (QDs) show antibunching at zero delay time, indicative of single photon emission. The antibunching time tau(R) increases or decreases with temperature depending on the QD size as a r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::61732b4fd6c39a548ebb6153fca8340e
https://doi.org/10.1016/j.physe.2010.02.025
https://doi.org/10.1016/j.physe.2010.02.025
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 40:2172-2175
The optical excitation spectra of single self-organized InAs/AlAs quantum dots reveal transitions to excited states involving quantum dot phonons. Resonant excitation is observed at 31 and 41 meV, corresponding to the “InAs-like” and “AlAs-like
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aee2b9659064b92a3849e9f5d2038c64
https://doi.org/10.1016/j.physe.2007.10.076
https://doi.org/10.1016/j.physe.2007.10.076
Publikováno v:
ResearcherID
The optical properties of self-assembled InAs quantum dots with AlAs barriers are reviewed. The dots are formed by self-organization of an InAs layer grown by molecular-beam epitaxy between layers of AlAs. The average size and density of the dots var
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::11adc81105ec6bbc4e390b6286255985
https://doi.org/10.4028/www.scientific.net/msf.555.9
https://doi.org/10.4028/www.scientific.net/msf.555.9
Composition Dependent Resonant Raman Scattering in Al0.33Ga0.67As/InxGa1-xAs1-yNy Multiquantum Wells
Publikováno v:
Materials Science Forum. 518:17-22
InxGa1-xAs1-yNy/Al0.33Ga0.67As multiquantum wells grown by plasma-assisted molecular beam epitaxy are studied by resonant inelastic light scattering. Sharp vibration modes have been observed at 323, 402, 454 and 501 cm-1. Their intensities resonate a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e3ec5c0561dfd834174f31e29a87837
https://doi.org/10.4028/www.scientific.net/msf.518.17
https://doi.org/10.4028/www.scientific.net/msf.518.17
Publikováno v:
physica status solidi (b). 243:1634-1638
We report resonant Raman scattering measurements on InGaAsN/AlGaAs multiquantum wells grown by plasma-assisted molecular beam epitaxy. Sharp vibration modes have been observed at 323, 402, 454 and 501 cm -1 . They are resonant in the energy range 1.8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d0eb35779d76ce2223aeaf0f8e2f8c4
https://doi.org/10.1002/pssb.200565192
https://doi.org/10.1002/pssb.200565192
Publikováno v:
physica status solidi (b). 243:1490-1493
This work reports on the morphology and optical properties of wurtzite InN layers grown by plasma assisted molecular beam epitaxy (PA-MBE) on Si(111) substrates. The layer morphology can be controlled by the effective indium to nitrogen molecular flu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d30294b72519e8d60c155487b8f88abb
https://doi.org/10.1002/pssb.200565311
https://doi.org/10.1002/pssb.200565311
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 32:111-114
We report on photoluminescence investigations of individual InAs quantum dots embedded in an AlAs matrix which emit in the visible region, in contrast to the more traditional InAs/GaAs system. Biexciton binding energies, considerably larger than for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34adcdd23f02af2601ddab7e7b426fef
https://doi.org/10.1016/j.physe.2005.12.102
https://doi.org/10.1016/j.physe.2005.12.102