Zobrazeno 1 - 3
of 3
pro vyhledávání: '"J. M. Bulger"'
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17:194
A sequence of running a short plasma clean followed by an optimized chamber conditioning and finally chemical vapor deposition (CVD) TiN deposition has been developed that minimizes contamination particles, wafer to wafer uniformity, and wet clean do
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bec2541c6ef14b8d35cf6e3a7a042014
https://doi.org/10.1116/1.590535
https://doi.org/10.1116/1.590535
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17:410
A design of experiments was used to characterize a metalorganic chemical vapor deposition (MOCVD) TiN production process and hardware. The factors evaluated included pedestal temperature, tetrakis diethylamido titanium (TDEAT) flow, reactor pressure,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c9e48a4b299246b957b946f576c75d5
https://doi.org/10.1116/1.590570
https://doi.org/10.1116/1.590570
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 16:2729
A chemical vapor deposition (CVD) TiN liner process was developed and integrated into 0.25 μm contact and via process modules as an adhesion layer and barrier for tungsten plug deposition. The previous physical vapor deposition (PVD) TiN process use
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a8a4f47898dab8b890944ec5ba21d84
https://doi.org/10.1116/1.590264
https://doi.org/10.1116/1.590264