Zobrazeno 1 - 10
of 17
pro vyhledávání: '"J. M. .. Lavine"'
Autor:
J. M. Lavine, S. A. Dumford
Publikováno v:
Journal of Applied Physics. 74:5135-5137
We have measured the number of photons/cm2 over the energy range 1.95 to 3.35 eV, required to form a negative‐relief image in 2000 A films of As2S3 using 100 A films of evaporated Ag, Ag2Te, Ag2Se, and AgBr. We have observed sensitivity below the b
Publikováno v:
Journal of Applied Physics. 74:2768-2770
The sensitivity of the Ag‐photodoping process has been measured as a function of photon energy between 1.9 and 6.4 eV. The sensitivity increases with increasing photon energy except at 3.8 eV (325 nm) where Ag exhibits an anomalous window. At this
Publikováno v:
Applied Physics Letters. 62:1099-1101
FTIR spectra reported by Brandt et al. [Solid State Commun. 81, 307 (1992)], Tischler et al. [Appl. Phys. Lett. 60, 639 (1992)], and Tsai et al. [Appl. Phys. Lett. 59, 2814 (1991), and 60, 1700 (1992)] have shown the presence of Si‐H and Si‐H2 li
Autor:
A. J. Bellezza, J. M. Lavine
Publikováno v:
MRS Proceedings. 283
We have observed no correlation between the presence or absence of the FTIR spectral lines at 669 and 2089 cm-1 (Si-H) and at 912 and 2112 cm-1(Si-H2) and the photoluminescent output of porous Si. We have observed no correlation between the presence
Autor:
S. A. Dumford, J. M. Lavine
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12:44
The sensitivity of the Ag2Te/As2S3 system has been measured as a top‐surface imaging, negative‐tone resist between 632.8 and 193 nm. The sensitivity at g‐line (435.8 nm) and i‐line (365 nm) is of the order of 5 and 0.5 J/cm2, respectively, an
Autor:
R. L. Mozzi, J. M. Lavine
Publikováno v:
Journal of Applied Physics. 41:280-285
Relatively shallow (2–10 μ) Zn diffusions into(111) Sb surfaces of undoped n‐type InSb with Zn surface concentration exceeding 1020/cm3 exhibit lattice contractions of the order of 0.12%, high dislocation densities and mosaic structure in the di
Publikováno v:
Journal of Applied Physics. 35:2581-2585
This paper investigates problems associated with multimode oscillations in semiconductor lasers. In particular, even in semiconductors there can exist a spatially nonuniform distribution of excess electrons and holes because a given mode de‐excites
Autor:
S. A. Lis, J. M. Lavine
Publikováno v:
Applied Physics Letters. 42:675-677
Spectral measurements over the wavelength range of 400–800 nm on As2S3, As2Se3, and GeSe2, measurements on a tuned structure of As2S3, and exact calculations on a multifilm structure support the recent suggestion that the photons relevant to the ph
Autor:
J. M. Lavine, C. A. Klein
Publikováno v:
Applied Physics Letters. 12:125-127
Power output versus beam current characteristics of electron‐beam‐pumped semiconductor lasers do not exhibit a linear dependence pattern. We demonstrate that this behavior reflects the nonuniform nature of the steady‐state distribution of bomba
Publikováno v:
SPIE Proceedings.
The use of Fresnel Zone Plates as alignment targets for both x-rayl and optical2 lithography has generated a need for understanding their focusing properties after they have been exposed to semiconductor processing procedures. Semiconductor processin