Zobrazeno 1 - 10
of 20
pro vyhledávání: '"J. Lupaca-Schomber"'
Autor:
T. Passow, J. Lupaca-Schomber, M. Karl, S. Li, Michael Hetterich, Frank Weber, Wolfgang Löffler, Heinz Kalt
Publikováno v:
Superlattices and Microstructures. 43:635-638
Pyramidal microcavities are a new class of optical resonators with potentially small mode volume and high quality factor. Our GaAs pyramids with embedded InGaAs quantum dots are placed on top of GaAs/AlAs distributed Bragg reflectors to increase the
Autor:
Wolfgang Löffler, S. Li, Michael Hetterich, J. Lupaca-Schomber, Heinz Kalt, Dimitri Litvinov, T. Passow, B. Daniel, J. Kvietkova, Dagmar Gerthsen, J. Fallert
Publikováno v:
physica status solidi c. 3:3943-3946
The influence of the growth conditions during molecular-beam epitaxy on the properties of InAs/GaAs quantum dot structures were systematically investigated by low temperature photoluminescence spectroscopy and transmission electron microscopy. The ci
Autor:
J. Fallert, S. Li, Michael Hetterich, Claus F. Klingshirn, N. Höpcke, J. Hetterich, Heinz Kalt, Dagmar Gerthsen, H. Burger, B. Daniel, Wolfgang Löffler, J. Lupaca-Schomber, B. Ramadout, Dimitri Litvinov, T. Passow
Publikováno v:
physica status solidi (b). 243:3812-3824
We investigate electrical spin injection from a semi-magnetic n-type ZnMnSe spin aligner into III–V p–i–n diodes with InGaAs quantum dots (QDs) in the active layer. Quantitative transmission electron microscopy techniques are applied to charact
Autor:
J. Lupaca-Schomber, J. Fallert, T. Passow, Dagmar Gerthsen, Heinz Kalt, B. Daniel, Wolfgang Löffler, J. Kvietkova, Dimitri Litvinov, Michael Hetterich, D. Tröndle, E. Tsitsishvili
Publikováno v:
physica status solidi c. 3:2406-2409
We report on the injection of electron spins into InGaAs quantum dots with an efficiency of up to 60%. This injection is observed in p-i-n light-emitting diode structures using the diluted magnetic semiconductor ZnMnSe as spin aligner (spin-LED). The
Autor:
M. Karl, F. Perez-Willard, T. Passow, J. Hawecker, C. Klingshirn, Michael Hetterich, J. Lupaca-Schomber, Dagmar Gerthsen, Heinz Kalt, Wolfgang Löffler, S. Li
Publikováno v:
AIP Conference Proceedings.
We discuss two different types of GaAs‐based microcavities: Single and coupled pillar‐type resonators with AlAs/GaAs distributed Bragg reflectors (DBRs) were fabricated by means of molecular‐beam epitaxy (MBE) and focussed‐ion‐beam (FIB) mi
Autor:
M. Karl, Frank Weber, Heinz Kalt, Dagmar Gerthsen, J. Hawecker, Wolfgang Löffler, S. Li, J. Lupaca-Schomber, T. Passow, Michael Hetterich
Publikováno v:
Applied Physics Letters. 90:161104
Pyramidal GaAs structures on top of GaAs∕AlAs distributed Bragg reflectors are investigated as candidates for true three-dimensional cavities with potentially low mode volume and high quality-factor. Different types of single and coupled resonators
Autor:
C. Klingshirn, Michael Hetterich, D. Tröndle, J. Fallert, J. Kvietkova, Dimitri Litvinov, Heinz Kalt, T. Passow, J. Lupaca-Schomber, Dagmar Gerthsen, M. Grün, Wolfgang Löffler, B. Daniel
Publikováno v:
Applied Physics Letters. 88:062105
We report on efficient injection of electron spins into InGaAs-based nanostructures. The spin light-emitting diodes incorporate an InGaAs quantum well or quantum dots, respectively, as well as a semimagnetic ZnMnSe spin-aligner layer. We show a circu
Publikováno v:
Applied Physics Letters. 87:212103
We investigate n-type chlorine-doped ZnMnSe epilayers with various Mn contents and doping concentrations. In ZnSe, the maximum dopability was 6×1019cm−3, which reduces to 1.1×1019cm−3 at 13% Mn content. At a constant ZnCl2 doping source tempera
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Akademický článek
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