Zobrazeno 1 - 10
of 30
pro vyhledávání: '"J. Levkoff"'
Publikováno v:
Journal of Crystal Growth. 298:94-97
We report on the in situ selective area etching (SAE) of InP using carbon tetrabromide (CBr 4 ) in a metal organic vapor phase (MOVPE) reactor at different pressures and temperatures. Etch rate dependence on growth temperature from 550 to 700 °C and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::933ec146f7a19b8555efac41b01397eb
https://doi.org/10.1016/j.jcrysgro.2006.10.121
https://doi.org/10.1016/j.jcrysgro.2006.10.121
Autor:
K. Feder, Mark S. Hybertsen, J.M. Vandenberg, B.S. Falk, K. Evans-Lutterodt, Roosevelt People, John Michael Geary, Muhammad A. Alam, M.W. Focht, R.E. Leibenguth, Theo Siegrist, S.K. Sputz, J. Sheridan-Eng, G.J. Przybyiek, F.S. Walters, J.A. Grenko, L. E. Smith, J. Levkoff, K.G. Glogovsky, L.C. Luther, Michael Geva, D.M. Tennant, D. V. Stampone, S. Shunk, N.N. Tzafaras, L.J. Peticolas, L.J.P. Ketelsen, D.M. Romero, S. N. G. Chu, J.E. Johnson, J.L. Zilko, J.L. Lentz, T.L. Pernell, Joseph Michael Freund, E. D. Isaacs, Liming Zhang, W.A. Gault, C.L. Reynolds
Publikováno v:
IEEE Journal of Quantum Electronics. 36:641-648
We describe the design, fabrication, and performance of a five-element quarterwave-shifted distributed feedback laser array with monolithically integrated spot size converters intended for use as a multiple-wavelength source in dense wavelength-divis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::827719dc6e70de0e798f899d38116719
https://doi.org/10.1109/3.845717
https://doi.org/10.1109/3.845717
Publikováno v:
Journal of Electronic Materials. 24:1577-1581
The influence of growth temperature on the composition of InGaAsP films grown by low pressure metalorganic vapor phase epitaxy (MOVPE) is reported for quaternary (Q) alloys having bandgap wavelengths of λg = 1.1, 1.3, and 1.5 μn. Films with these d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b6f982172549b99288df20e98d88e4c
https://doi.org/10.1007/bf02676814
https://doi.org/10.1007/bf02676814
Autor:
J. Levkoff, A. Leiberich
Publikováno v:
Journal of Crystal Growth. 100:330-342
Double crystal X-ray diffraction measurements show that the cubic film unit cell defined by Vegard's law is triclinicly distorted and titled with respect to the substrate unit cell. The distortion and tilt angles oppose each other defining a crystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8791acacc13b14f957a44dbe2470fc38
https://doi.org/10.1016/0022-0248(90)90232-a
https://doi.org/10.1016/0022-0248(90)90232-a
Publikováno v:
International Conference on Indium Phosphide and Related Materials, 2005..
Process control methodology based on in-situ reflectance measurements can be used with a process model to reduce calibration runs in the development and manufacture of InGaAlAs lasers and modulators.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b0495aac09325622d119d9e0e29c6d2
https://doi.org/10.1109/iciprm.2005.1517461
https://doi.org/10.1109/iciprm.2005.1517461
Publikováno v:
Proceedings of LEOS'94.
High bandwidth telecommunications depends on the efficient manufacture of semiconductor lasers. The quality of partially processed laser structures can be monitored at the wafer level by spatially resolved photoluminescence (SRPL), providing timely f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da54f137fca5dbc3257e80acdcccb102
https://doi.org/10.1109/leos.1994.586281
https://doi.org/10.1109/leos.1994.586281
Publikováno v:
MRS Proceedings. 240
Microelectronic devices require deposition of sequences of thin epitaxial layers, with individual layer thicknesses in some instances specified to within tolerances of the order of inter-atomic spacings. Double crystal X-ray diffraction provides meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::570730f33010adca432b71057020de48
https://doi.org/10.1557/proc-240-177
https://doi.org/10.1557/proc-240-177
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:1027
A system was developed that significantly improves the accuracy of molecular‐beam epitaxial flux calibration and provides ±1.0% run‐to‐run control of film thickness as demonstrated by double‐crystal x‐ray diffraction analysis of 980 nm GaA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bae9b67839013b55a57b3ff0af76d336
https://doi.org/10.1116/1.586862
https://doi.org/10.1116/1.586862
Autor:
J. Levkoff, A. Leiberich
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:422
Important corrections are required for x‐ray diffraction characterization of epitaxial AlxGa1−xAs grown on offcut GaAs substrates. These corrections can have technological impacts for thin film fabrication where precise and reproducible process c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df74d443ed07ff9f6e9f4184f871177b
https://doi.org/10.1116/1.585038
https://doi.org/10.1116/1.585038
Publikováno v:
The Journal of Chemical Physics. 88:7952-7963
Experimental measurements of the dynamics of the collisions between N2 van der Waals clusters and metallic surfaces are discussed. Large N2 van der Waals clusters are formed by high pressure nozzle expansions of pure N2 and N2 seeded in helium. Angul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::808642e531b878d3388748a12546ff74
https://doi.org/10.1063/1.454252
https://doi.org/10.1063/1.454252