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Akademický článek
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Autor:
Romain Brenot, J. Landreau, Guy Aubin, Abderrahim Ramdane, Anthony Martinez, Francois Lelarge, J.-G. Provost
Publikováno v:
Comptes Rendus Physique. 10:1000-1007
Recent progress in the field of quantum dot/dash based semiconductor optical amplifiers (SOAs) for slow and fast light is discussed. Room temperature fast light has been obtained in InAs/InP QDash based SOAs by means of coherent population oscillatio
Publikováno v:
IEEE Journal of Quantum Electronics. 29:1676-1681
The ability of the InGaAs/InGaAlAs multi-quantum-well (MQW) system to achieve ultra-low-chirp operation under 10-Gb/s operation is experimentally demonstrated. The MQW active layer has been grown by a solid-source molecular beam epitaxy (MBE) method.
Autor:
Alain Villeneuve, George I. Stegeman, Hisao Nakajima, J. Ehrhardt, A. Ougazzaden, J. Landreau
Publikováno v:
IEEE Photonics Technology Letters. 4:1335-1338
The linewidth enhancement factor of an InGaAs/InGaAsP strained multiquantum well optical amplifier was measured interferometrically. It varied from 3 to 18 over the wavelength range from 1500 to 1600 nm with injection currents varying from one to fou
Autor:
F. Pommereau, Alexandre Shen, Romain Brenot, Francois Lelarge, O. Legouezigou, G-H Duan, J. Landreau
Publikováno v:
Optical Fiber Communication Conference and National Fiber Optic Engineers Conference.
A new architecture for low-cost WDM-PON is proposed, which combines a multi-wavelength CW source with a Reflective SOA at 2.5 Gbps, with an optical budget up to 20 dB.
Publikováno v:
Applied Physics Letters. 73:2718-2720
Conditions for the optimization of short pulse amplification and gating times in vertical cavity laser amplifiers are elucidated using femtosecond photoexcitation. The experimental results pertaining to the temporal response are analyzed by a theoret
Autor:
F. Pommereau, M. Attali, R. Brenot, C. Cuisin, E. Derouin, O. Drisse, G.H. Duan, J. Landreau, L. Le Gouezigou, O. Le Gouezigou, F. Lelarge, F. Poingt, B. Rousseau
Publikováno v:
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings.
This invited paper gives an overview of the recent advances on two-dimensional photonic crystals on InP based materials. In particular, the fabrication approach developed at Alcatel-Thales III-V Lab is described in detail. Optical characterisation of
Publikováno v:
IEEE Photonics Technology Letters. 9:895-897
A new tunable laser structure using a single electroabsorption (EA) tuning super structure grating section for fast wavelength switching operation, has been realized. The tuning mechanism of this absorption change distributed Bragg reflector (DBR) la
Publikováno v:
Optical Fiber Communications, OFC..
Summary for only given. We describe a very fast wavelength tuning capability (13 ps) DFB laser with an intracavity Franz-Keldysh (F-K) electroabsorptive section. The DFB laser comprises two gain sections and an intracavity F-K section providing wavel