Zobrazeno 1 - 10
of 42
pro vyhledávání: '"J. L. ZILKO"'
Publikováno v:
Journal of Crystal Growth. 124:112-117
We present the results of an investigation of the effect of group V precursor on the compositional uniformity of InGaAsP (λ = 1.35 μm) layers grown by low pressure metalorganic vapor phase epitaxy on 50 mm diameter substrates. The usual hydride pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12ce650be19b097563f9611baacfa953
https://doi.org/10.1016/0022-0248(92)90446-p
https://doi.org/10.1016/0022-0248(92)90446-p
Autor:
V. R. McCrary, S.N.G. Chu, L.J.P. Ketelsen, M. A. Brelvi, G. Livescu, P. M. Thomas, S. E. G. Slusky, J. W. Lee, J. L. Zilko
Publikováno v:
Microelectronic Engineering. 18:75-88
We have successfully grown InGaAsP/InP single quantum well (SQW) and multi quantum well (MQW) structures by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The LP-MOCVD reactor is a commercial unit built by AIXTRON GmbH, the first of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c46cd20579b2051e2e3feb91e201ab77
https://doi.org/10.1016/0167-9317(92)90123-9
https://doi.org/10.1016/0167-9317(92)90123-9
Autor:
V. R. McCrary, S. E. G. Slusky, S. N. G. Chu, G. Livescu, J. W. Lee, L. J. P. Ketelsen, M. A. Brelvi, J. L. Zilko, P. M. Thomas
Publikováno v:
Journal of Applied Physics. 69:7267-7272
InGaAsP/InP single‐quantum well and multiquantum‐well (MQW) structures have been successfully grown by low‐pressure metalorganic chemical vapor deposition (LP‐MOCVD). The quantum wells grown consist of 1.3‐ and 1.5‐μm composition InGaAsP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdf907fe1e66d177922f784d2916bed7
https://doi.org/10.1063/1.347624
https://doi.org/10.1063/1.347624
Autor:
J. P. Blaha, V. Swaminathan, V. R. McCrary, S. E. G. Slusky, J. W. Lee, S.N.G. Chu, J. L. Zilko, P. M. Thomas, D.L. Van Haren
Publikováno v:
Journal of Crystal Growth. 112:39-46
We present here characterization data on (1.3 μm composition) In0.73Ga0.27As0.60P0.40/InP epitaxial layers that were grown in a vertical low pressure MOCVD reactor. Characterization data include determination of the photoluminescence wavelengths and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9c27d5d2978786df7ece812af6fba44
https://doi.org/10.1016/0022-0248(91)90910-w
https://doi.org/10.1016/0022-0248(91)90910-w
Autor:
U.K. Chakrabarti, Ralph A. Logan, John Lopata, J. L. Zilko, J.A. Long, B. P. Segner, D.L. Van Haren
Publikováno v:
Journal of Crystal Growth. 109:264-271
The effect of mesa shape on the planarity of InP regrowths produced by atmospheric pressure and low pressure (0.1 atm) selective (SiO 2 masked) metalorganic vapor phase epitaxy (MOVPE) is investigated. We find that for two separate atmospheric pressu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc7c97da1118281f001962181cb97913
https://doi.org/10.1016/0022-0248(91)90188-b
https://doi.org/10.1016/0022-0248(91)90188-b
Autor:
John Vanatta Gates, J.E. Johnson, J. M. Geary, C.L. Reynolds, S.N.G. Chu, Mark S. Hybertsen, L.J.P. Ketelsen, Mark Cappuzzo, S.K. Sputz, J.A. Grenko, J.M. Vandenberg, E.J. Laskowski, L.T. Gomez, K.G. Glogovsky, W.A. Gault, J. L. Zilko, M. Muehlner, Marlin W. Focht
Publikováno v:
OFC/IOOC . Technical Digest. Optical Fiber Communication Conference, 1999, and the International Conference on Integrated Optics and Optical Fiber Communication.
We demonstrate for the first time an EA-modulated hybrid integrated wavelength selectable laser comprised of 1.55 /spl mu/m DFB laser array and amplifier/modulator chips fabricated using a novel spot-size converter integration technique, and opticall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1d3cb93247a101e0578a343abf2b238
https://doi.org/10.1109/ofc.1999.766073
https://doi.org/10.1109/ofc.1999.766073
Publikováno v:
Applied Physics Letters. 62:1979-1981
Selectively excited room‐temperature photoluminescence spectra of InGaAs‐GaAs‐AlGaAs quantum well heterostructures reveal a broad line at midgap energies originating in the Si doped AlGaAs. When carriers are photoexcited directly in the wells,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a8df39bd67437a6ac1751236a1f5ece
https://doi.org/10.1063/1.109509
https://doi.org/10.1063/1.109509
Autor:
J. L. Zilko
The activities of January-march 1993 have continued to revolve around detailed design of the AT and T transmitter and receiver assemblies and associated pieceparts and in performing initial experiments to determine the feasibility of the design appro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2e5ab285b9c7fe8d49e683be8c57e4f
https://doi.org/10.21236/ada263429
https://doi.org/10.21236/ada263429
Autor:
J. L. Zilko
The activities of October-December 1992 have primarily revolved around detailed design of the AT and T transmitter and receiver and associated pieceparts and in performing initial experiments to determine the feasibility of the design approach.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0d2143860aeb8c9eadba5f2f505c213
https://doi.org/10.21236/ada259810
https://doi.org/10.21236/ada259810
Publikováno v:
Journal of Vacuum Science and Technology. 17:595-602
Low energy ion bombardment of a growing film during vapor phase deposition has been shown to be useful in providing additional control over elemental sticking probabilities. In such a deposition mode, the probability of a given atom being incorporate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a18b854a89e1b80f0bc9654ce80fd7e
https://doi.org/10.1116/1.570521
https://doi.org/10.1116/1.570521