Zobrazeno 1 - 10
of 27
pro vyhledávání: '"J. L. Weyher"'
Publikováno v:
Journal of Electronic Materials.
Controlling the electrical properties of SiC requires knowledge of the nature and properties of extended defects. We have employed orthodox defect-selective etching and photo-etching methods to reveal typical and new structural defects in commercial
Publikováno v:
The Journal of Physical Chemistry C. 126:1115-1124
Autor:
S. Müller, W. Späth, J. Luft, W. Jantz, M. Baeumler, G. Herrmann, Cesare Frigeri, J. L. Weyher
Publikováno v:
Defect Recognition and Image Processing in Semiconductors 1997
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de316c584165184a0e5c7185fc3ba3e2
https://doi.org/10.1201/9781315140810-99
https://doi.org/10.1201/9781315140810-99
Autor:
J. Luft, S. Müller, R. Stibal, K. Sporrer, J. L. Weyher, W. Späth, M. Baeumler, W. Jantz, G. Herrmann
Publikováno v:
Defect Recognition and Image Processing in Semiconductors 1997
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a24422c06f2be97225b8eae79da6bd0
https://doi.org/10.1201/9781315140810-95
https://doi.org/10.1201/9781315140810-95
Publikováno v:
Ultramicroscopy. 71:231-234
Processed InP and GaAs surfaces are studied by synchronous atomic-force (AFM) and photon scanning tunneling microscopy (PSTM). A beam injection system at 1.06 μm in the transparency range of semiconductors is described which makes it possible to per
Publikováno v:
Materials Science and Engineering: B. 44:96-100
The cross-section of Ga(Al,In)As/GaAs heterostructures has been investigated by selective wet etching using citric acid/hydrogen peroxide (C 6 H 8 O 7 :H 2 O 2 ), NaOCl, HCl and diluted CrO 3 -HF solutions. Composition and doping variation were trans
Publikováno v:
Scopus-Elsevier
Different thermal treatments on bulk undoped and S doped InP were carried out. The ambient atmosphere, temperature, heating, and cooling conditions were varied to study the influence of each individual parameter on sample characteristics. It is appar
Publikováno v:
Materials Science and Engineering: B. 28:120-125
A structural characterization of liquid encapsulated Czochralski InP heavily doped with Zn is presented. At a hole density as high as 3.0 × 10 18 cm −3 , corresponding to a Zn content of 1019 atoms cm−3, the crystals are dislocation-free. They c
Autor:
J. Bonnafe, H Rufer, P. Gall, J P Fillard, K Lohnert, M Baumgartner, J. L. Weyher, Le Si Dang
Publikováno v:
Semiconductor Science and Technology. 7:A45-A52
Three independent but complementary methods (DSL photoetching combined with etch rate profiling, spatially resolved PL and LST) were employed to study the distribution of microdefects and electrically active centres in commercially available SI undop