Zobrazeno 1 - 6
of 6
pro vyhledávání: '"J. L. Truitt"'
Autor:
D.W. van der Weide, Charles Tahan, Levente Klein, Susan Coppersmith, Srijit Goswami, Robert Joynt, Patricia M. Mooney, J. O. Chu, Mark Friesen, J. L. Truitt, K. A. Slinker, Mark A. Eriksson, L. M. McGuire
Publikováno v:
Nature Physics. 3:41-45
Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a serious source
Autor:
Alexei M. Tyryshkin, J. L. Truitt, Friedrich Schäffler, Mark A. Eriksson, J. O. Chu, Stephen Aplin Lyon, Wolfgang Jantsch, Thomas Schenkel, Jeffrey Bokor, Susan Coppersmith
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 35:257-263
We discuss pulsed electron spin resonance measurements of electrons in Si and determine the spin coherence from the decay of the spin echo signals. Tightly bound donor electrons in isotopically enriched 28 Si are found to have exceptionally long spin
Publikováno v:
Nanotechnology. 14:60-64
Using picosecond millimetre-wave impulses we probe the electronic structure and dynamics of electrons in a single quantum dot—the artificial atom—which is essential for understanding their applications such as computational elements and detectors
Publikováno v:
Physica B: Condensed Matter. 314:444-449
Using both picosecond millimeter-wave impulses and continuous microwave radiation, we probe the electronic structure and dynamic response of single-electron tunneling in structured quantum dots, essential for understanding their applications as compu
Autor:
J. L. Truitt, K. A. Slinker, K. L. M. Lewis, John A. Ott, Mark A. Eriksson, Srijit Goswami, Robert Joynt, J. O. Chu, D.W. van der Weide, Levente Klein, Susan Coppersmith, Patricia M. Mooney, Donald E. Savage, Max G. Lagally, Mark Friesen, Robert H. Blick, Charles Tahan
Publikováno v:
Applied Physics Letters. 84:4047-4049
We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive ion etching.
Autor:
K. L. M. Lewis, Levente Klein, Alexei M. Tyryshkin, Mark Friesen, Patricia M. Mooney, Robert Joynt, Donald E. Savage, D.W. van der Weide, J. L. Truitt, K. A. Slinker, Susan Coppersmith, Charles Tahan, Mark A. Eriksson, J. O. Chu
Publikováno v:
ResearcherID
Topics in Applied Physics ISBN: 9783540793649
Topics in Applied Physics ISBN: 9783540793649
Silicon quantum devices have progressed rapidly over the past decade, driven by recent interest in spintronics and quantum computing. Spin coherence has emerged as a leading indicator of suitable devices for quantum applications. In particular, the t
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