Zobrazeno 1 - 10
of 20
pro vyhledávání: '"J. L. Trolet"'
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2019, 66 (5), pp.810-819. ⟨10.1109/TNS.2019.2908055⟩
IEEE Transactions on Nuclear Science, 2019, 66 (5), pp.810-819. ⟨10.1109/TNS.2019.2908055⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2019
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2019, 66 (5), pp.810-819. ⟨10.1109/TNS.2019.2908055⟩
IEEE Transactions on Nuclear Science, 2019, 66 (5), pp.810-819. ⟨10.1109/TNS.2019.2908055⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2019
This paper analyses the neutron irradiation impact on the electrical performances of unstressed, ON-state, OFF-state, and negative gate bias (NGB) stressed AlInN/GaN HEMTs. These irradiations have resulted in the creation of electron traps that are c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8496a51d949a6efbcb9d44f825aec206
https://doi.org/10.1109/tns.2019.2908055
https://doi.org/10.1109/tns.2019.2908055
Publikováno v:
EPJ Web of Conferences
7th International Conference on Advancements in Nuclear Instrumentation Measurement Methods and their Applications (ANIMMA 2021)
7th International Conference on Advancements in Nuclear Instrumentation Measurement Methods and their Applications (ANIMMA 2021), Jun 2021, Pargue, Czech Republic. pp.09003, ⟨10.1051/epjconf/202125309003⟩
EPJ Web of Conferences, Vol 253, p 09003 (2021)
7th International Conference on Advancements in Nuclear Instrumentation Measurement Methods and their Applications (ANIMMA 2021)
7th International Conference on Advancements in Nuclear Instrumentation Measurement Methods and their Applications (ANIMMA 2021), Jun 2021, Pargue, Czech Republic. pp.09003, ⟨10.1051/epjconf/202125309003⟩
EPJ Web of Conferences, Vol 253, p 09003 (2021)
To fulfill the requirements of the industry, the feasibility of a transportable neutron spectrometer is under study by our collaboration. Preliminary studies have led to a solution based on a unique-multi-detectors-Bonner sphere, which has the advant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7796705db33b4e5308ff0df59df9d881
https://doi.org/10.1051/epjconf/202125309003
https://doi.org/10.1051/epjconf/202125309003
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2015, 55 (9-10), pp.1512-1516. ⟨10.1016/j.microrel.2015.06.136⟩
Microelectronics Reliability, Elsevier, 2015, 55 (9-10), pp.1512-1516. ⟨10.1016/j.microrel.2015.06.136⟩
This paper deals with an experimental study and a comparative study of the effects of total ionising dose of 60 Co gamma radiation on Si-IGBT and SiC-JFET. The response of the threshold voltage and the turn-on switching parameters are reported for bo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8785bf2886c5315f9d003fc0a4c9a614
https://doi.org/10.1016/j.microrel.2015.06.136
https://doi.org/10.1016/j.microrel.2015.06.136
Autor:
Christophe Gaquiere, Bertrand Boudart, Guillaume Brocero, P. Mary, S. Petitdidier, J. L. Trolet, P. Eudeline, Yannick Guhel
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, 2017, pp.1-1. ⟨10.1109/TNS.2017.2708692⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2017, pp.1-1. ⟨10.1109/TNS.2017.2708692⟩
IEEE Transactions on Nuclear Science, 2017, pp.1-1. ⟨10.1109/TNS.2017.2708692⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2017, pp.1-1. ⟨10.1109/TNS.2017.2708692⟩
This paper shows the impact of low fluence neutron irradiation on AlInN/GaN HEMTs before and after a negative gate bias stress done at a gate-to-source voltage ( $V_{\text {GS}})$ of −20 V and at a drain-to-source voltage ( $V_{\text {DS}})$ of 0 V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::737f514db7f2994c8985194b7d827f8b
https://hal.science/hal-01645121
https://hal.science/hal-01645121
Autor:
J. L. Trolet, S. Petitdidier, Christophe Gaquiere, Yannick Guhel, P. Mary, A. Vivier, Bertrand Boudart, F. Berthet
Publikováno v:
Solid-State Electronics
Solid-State Electronics, Elsevier, 2017, 127, pp.13-19. ⟨10.1016/j.sse.2016.10.039⟩
Solid-State Electronics, 2017, 127, pp.13-19. ⟨10.1016/j.sse.2016.10.039⟩
Solid-State Electronics, Elsevier, 2017, 127, pp.13-19. ⟨10.1016/j.sse.2016.10.039⟩
Solid-State Electronics, 2017, 127, pp.13-19. ⟨10.1016/j.sse.2016.10.039⟩
In this paper, the impact of a severe on-state stress on the I DS (V DS , V GS ) characteristics of AlInN/GaN devices is analyzed by electroluminescence technique performed at room temperature. In fact, the devices operate in bias conditions that all
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2ce84ca61d63fa827e1c52447c765426
https://hal.archives-ouvertes.fr/hal-01646143
https://hal.archives-ouvertes.fr/hal-01646143
Autor:
Christophe Gaquiere, S. Petitdidier, P. Mary, Bertrand Boudart, G. Brocero, Yannick Guhel, P. Eudeline, J. L. Trolet
Publikováno v:
2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
This paper shows the impact of low fluence neutron irradiation on AlInN/GaN HEMTs before and after a Negative Gate Bias stress done at a gate-to-source voltage (Vgs) of − 20 V and at a drain-to-source voltage (Vds) of 0 V during 216 h. We have show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e08939bf5d036929b4e185fcd505ab86
https://doi.org/10.1109/radecs.2016.8093112
https://doi.org/10.1109/radecs.2016.8093112
Publikováno v:
Radioprotection. 46:25-37
L’objet de cet article est de proposer un procede de controle de la contamination surfacique, principalement due au tritium, a l’aide d’une mesure par scintillation liquide effectuee sur des frottis humides solubles. La mesure, realisee in-situ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a255c07745cfd7f9a84e19a2154d7ee
https://doi.org/10.1051/radiopro/2010052
https://doi.org/10.1051/radiopro/2010052
Autor:
S. Petitdidier, Christophe Gaquiere, Bertrand Boudart, P. Mary, Yannick Guhel, F. Berthet, J. L. Trolet
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2016
HAL
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2016
HAL
This paper shows the impact of low fluence neutrons irradiation on AlGaN/GaN and AlInN/GaN HEMTs. The initial presence of electrical traps seems to play a major role on the evolution of dc electrical characteristics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89319d7b1d13e7bf0171004f2ae1ad92
https://hal.archives-ouvertes.fr/hal-02936082
https://hal.archives-ouvertes.fr/hal-02936082
Autor:
S. Petitdidier, Yannick Guhel, Bertrand Boudart, Christophe Gaquiere, Philippe Mary, F. Berthet, J. L. Trolet
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2015, 55 (9-10), pp.1719-1723. ⟨10.1016/j.microrel.2015.06.070⟩
Microelectronics Reliability, 2015, 55 (9-10), pp.1719-1723. ⟨10.1016/j.microrel.2015.06.070⟩
Microelectronics Reliability, Elsevier, 2015
HAL
Microelectronics Reliability, Elsevier, 2015, 55 (9-10), pp.1719-1723. ⟨10.1016/j.microrel.2015.06.070⟩
Microelectronics Reliability, 2015, 55 (9-10), pp.1719-1723. ⟨10.1016/j.microrel.2015.06.070⟩
Microelectronics Reliability, Elsevier, 2015
HAL
This paper shows the influence of pre-existing electrical traps on the reliability of AlInN/GaN HEMTs by using simple methods. So, a kink effect has been highlighted by studying the impact of the illumination and the bias conditions on the electrical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc444dde46aec1175a2445642dcaa1e7
https://hal.archives-ouvertes.fr/hal-01646909
https://hal.archives-ouvertes.fr/hal-01646909
Autor:
Bertrand Boudart, A. Oukaour, B. Tala-Ighil, Hamid Gualous, M. Piccione, B. Pouderoux, J. L. Trolet
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2012, 59 (6), pp.3235-3243. ⟨10.1109/TNS.2012.2216289⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2012, 59 (6), pp.3235-3243. 〈10.1109/TNS.2012.2216289〉
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2012, 59 (6), pp.3235-3243. ⟨10.1109/TNS.2012.2216289⟩
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2012, 59 (6), pp.3235-3243. 〈10.1109/TNS.2012.2216289〉
This paper deals with the effects of 60Co gamma irradiation on punch-through commercial insulated gate bipolar transistors turn-off switching behavior. The response of the threshold voltage, the gate-emitter leakage current, the collector leakage cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1cfe8bbd648441359f603f5fe1bcefba
https://hal.archives-ouvertes.fr/hal-01647617
https://hal.archives-ouvertes.fr/hal-01647617