Zobrazeno 1 - 10
of 11
pro vyhledávání: '"J. L. Taraci"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 242:205-208
A rich variety of nanostructures can be synthesized by varying pressure and temperature during vapor–liquid–solid (VLS) epitaxy on Si. The chemical vapor deposition (CVD) growth by VLS of epitaxial Ge nanowires and nanopillars seeded by metallic
Publikováno v:
Journal of Applied Physics. 96:7556-7567
The pressure and temperature dependencies for vapor-liquid-solid (VLS) growth of Ge nanostructures on Si using chemical vapor deposition are reported. Gold nanodots self-assembled by evaporation on clean hydrogen-terminated and heated Si substrates a
Autor:
J. L. Taraci, Changwu Hu, John Tolle, John Kouvetakis, Ignatius S. T. Tsong, Peter A. Crozier, Matthew R. Bauer
Publikováno v:
Chemistry of Materials. 15:3569-3572
Stoichiometric SiGe and Si4Ge epitaxial films and coherent islands are created on Si(100) via thermal dehydrogenation of H3SiGeH3 and Ge(SiH3)4, respectively. The control of morphology and composition x of Si1-xGex nanostructures at the atomic level
Autor:
Antonio A. Garcia, J. W. Dailey, J. L. Taraci, Rohit Rosario, T. Clement, Mark A. Hayes, Devens Gust, S. T. Picraux
Publikováno v:
The Journal of Physical Chemistry B. 108:12640-12642
A rough surface morphology is shown to significantly amplify the light-induced change in water contact angle of a photoresponsive surface. Smooth Si surfaces and fractally rough Si nanowire surfaces grown on a Si substrate were studied, both coated w
Publikováno v:
Applied Physics Letters. 84:5302-5304
We report epitaxial growth of Ge nanopillars (NPs) on Si(100) by vapor-liquid-solid (VLS) growth from digermane. This growth morphology is characterized by short, low-aspect-ratio pillars and is markedly different from the long, narrow nanowires (NWs
Autor:
John Tolle, J. L. Taraci, John Kouvetakis, Jose Menendez, David J. Smith, Martha R. McCartney, M. A. Santana
Publikováno v:
Applied Physics Letters. 78:3607-3609
We report the development of a simple chemical route to growing Ge1−xSnx semiconductors using ultrahigh-vacuum chemical vapor deposition and the molecular precursor (Ph)SnD3 as the source of Sn atoms. Thin films were deposited on oxidized and oxide
Autor:
Pedro Peralta, J. L. Taraci, Martha R. McCartney, Martin Hÿtch, Jeffery Drucker, S. T. Picraux, T. Clement
Publikováno v:
Nanotechnology. 16(10)
A method for obtaining detailed two-dimensional strain maps in nanowires and related nanoscale structures has been developed. The approach relies on a combination of lattice imaging by high-resolution transmission electron microscopy and geometric ph
Autor:
John Tolle, Changwu Hu, John Kouvetakis, Ignatius S. T. Tsong, Peter A. Crozier, J. L. Taraci, Matthew R. Bauer
Publikováno v:
ChemInform. 34
Stoichiometric SiGe and Si4Ge epitaxial films and coherent islands are created on Si(100) via thermal dehydrogenation of H3SiGeH3 and Ge(SiH3)4, respectively. The control of morphology and composition x of Si1-xGex nanostructures at the atomic level
Autor:
Matthew R. Bauer, Stefan Zollner, Erika Duda, David J. Smith, N. V. Edwards, Jose Menendez, J. L. Taraci, John Kouvetakis, Martha R. McCartney, John Tolle
Publikováno v:
MRS Proceedings. 692
UHV-CVD growth based on a deuterium stabilized Sn hydride and digermane produces Ge-Sn alloys with tunable bandgaps. The Ge1−xSnx (x=2–20 at.%) alloys are deposited on Si (100) and exhibit superior crystallinity and thermal stability compared wit
Autor:
P. Domínguez-García, S. T. Picraux, Dongqing Yang, Antonio A. Garcia, Devens Gust, Solitaire Lindsay, Mark A. Hayes, J. L. Taraci, Sonia Melle, Miguel A. Rubio, Manuel Marquez, Ana Egatz-Gomez, T. Clement
Publikováno v:
Applied Physics Letters. 89:129902