Zobrazeno 1 - 2
of 2
pro vyhledávání: '"J. L. Sampson"'
Publikováno v:
IEEE Transactions on Nuclear Science. 30:4183-4186
An experimental evaluation of the transient radiation upset threshold of silcon MESFET circuits has been performed. Upset thresholds in the range of 2 to 6×108 rad/sec have been observed for shift registers and 1 to 5×107 rad/sec for 1K static memo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d78c6e315644e736582e10ff247baeeb
https://doi.org/10.1109/tns.1983.4333105
https://doi.org/10.1109/tns.1983.4333105
Autor:
K. A. McCarthy, J. L. Sampson
Publikováno v:
Journal of Applied Physics. 34:142-143
An examination of sodium chloride and potassium chloride single crystals pulled from the melt by a method based on that of Czochralski reveals facets, stepped surfaces, and ridges on the surfaces of the crystals. By growing crystals of various axial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cf24c1b1187aafbc0559d91867d5f04
https://doi.org/10.1063/1.1729055
https://doi.org/10.1063/1.1729055