Zobrazeno 1 - 8
of 8
pro vyhledávání: '"J. L. Mermet"'
Publikováno v:
Microelectronic Engineering. 33:293-300
The reliability of copper interconnection depends on the barrier effectiveness of conductive or non-conductive layers to block any copper motion. The conductive barrier materials currently used in Al-based interconnections — Ti, TiN, W and nitrided
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d196442d7966c90de4fe348c626b579
https://doi.org/10.1016/s0167-9317(96)00057-3
https://doi.org/10.1016/s0167-9317(96)00057-3
Publikováno v:
Microelectronic Engineering. 33:3-13
A complete optimisation of the copper CVD deposition was achieved with a bubbler delivery system. However the deposition rate was found to be limited to 30 nm/min. With a DLI delivery system, a major improvement of the deposition rate 100 nm/min was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03c579c87a05e5f81be8d249676fd470
https://doi.org/10.1016/s0167-9317(96)00025-1
https://doi.org/10.1016/s0167-9317(96)00025-1
Autor:
T. Gessner, A. Bertz, G. Crean, Matthias Plötner, W. Hasse, J. L. Mermet, R. Madar, D. Save, J. Torres, F. Binder
Publikováno v:
Microelectronic Engineering. 34:119-122
The feasibility of copper metallization for interconnections in ultra-large scale integrated circuits is under evaluation in the ESPRIT/JESSI project COIN (Copper INterconnections). Research has been performed comprising all basic aspects of copper m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3b18cf08dfec2425cbf1ad08f958c45
https://doi.org/10.1016/s0167-9317(96)00022-6
https://doi.org/10.1016/s0167-9317(96)00022-6
Publikováno v:
Journal de Physique IV Proceedings
Journal de Physique IV Proceedings, EDP Sciences, 1995, 05 (C5), pp.C5-517-C5-523. ⟨10.1051/jphyscol:1995560⟩
Journal de Physique IV Proceedings, EDP Sciences, 1995, 05 (C5), pp.C5-517-C5-523. ⟨10.1051/jphyscol:1995560⟩
Thin copper films were grown using hexafluoroacetylacetonato-copper(I) trimethylvinylsilane [Cu(hfac)tmvs].This precursor was delivered through a bubbler using hydrogen as carrier gas. Water vapour was used as reactant. The films were deposited on sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0446c2f5ea69610359f1b8c3398ed923
https://doi.org/10.1051/jphyscol:1995560
https://doi.org/10.1051/jphyscol:1995560
Autor:
F. Braud, A. Ermolieff, J.C. Oberlin, J. L. Mermet, J. Torres, M.-J. Mouche, J. Palleau, J. Piaget
Publikováno v:
MRS Proceedings. 337
The thermal stability at the Cu / SiO2 interface has been studied as a function of the annealing atmosphere composition. Using either good vacuum conditions or refractory metal encapsulation, no copper diffusion into SiO2 has been found even for ther
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8600440fd6c748553916c98f1079b89
https://doi.org/10.1557/proc-337-225
https://doi.org/10.1557/proc-337-225
Publikováno v:
Annales d'oto-laryngologie et de chirurgie cervico faciale : bulletin de la Societe d'oto-laryngologie des hopitaux de Paris. 93(4-5)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::4a51e93e1d336d14b6270fe0c3b3c14b
https://pubmed.ncbi.nlm.nih.gov/182056
https://pubmed.ncbi.nlm.nih.gov/182056
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Akademický článek
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