Výsledky vyhledávání - "J. L. M. Oosthoek"

Growth Rate Determination through Automated TEM Image Analysis

Autor: Karen Attenborough, Robertus A.M. Wolters, Dirk J. Gravesteijn, Bart J. Kooi, J. L. M. Oosthoek, Jeff Th. M. De Hosson

Publikováno v: Microscopy and Microanalysis, 16(3), 291-299. Cambridge University Press

A computer-controlled procedure is outlined here that first determines the position of the amorphous-crystalline interface in an image. Subsequently, from a time series of these images, the velocity of the crystal growth front is quantified. The proc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::901b011653a0847c7b84eae6686e6726
https://hdl.handle.net/11370/0cbd9db9-a2fd-40b8-ba93-b0f634b8e6ca

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Charge collection microscopy of in-situ switchable PRAM line cells in a scanning electron microscope: Technique development and unique observations

Autor: J. L. M. Oosthoek, G. H. ten Brink, Bart J. Kooi, Dirk J. Gravesteijn, R. W. Schuitema

Publikováno v: Review of Scientific Instruments, 86(3):033702. AMER INST PHYSICS

An imaging method has been developed based on charge collection in a scanning electron microscope (SEM) that allows discrimination between the amorphous and crystalline states of Phase-change Random Access Memory (PRAM) line cells. During imaging, th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a8d8326864b52a411b3b9a2733a4dd6b
https://research.rug.nl/en/publications/bfdf3dcf-8a54-427b-bcd3-1f1f430c51d0

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Evolution of cell resistance, threshold voltage and crystallization temperature during cycling of line-cell phase-change random access memory

Autor: J. L. M. Oosthoek, Bart J. Kooi, Dirk J. Gravesteijn, K. Attenborough, F.J. Jedema, G.A.M. Hurkx

Publikováno v: Journal of Applied Physics, 110(2):024505. AMER INST PHYSICS

Doped SbTe phase change (PRAM) line cells produced by e-beam lithography were cycled 100 million times. During cell cycling the evolution of many cell properties were monitored, in particular the crystalline and amorphous resistance, amorphous resist

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e59e5e6d33430a81bf142e20af83204f
https://research.rug.nl/en/publications/6fa87bf4-ff8c-428c-8bc6-a43983a832c5

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Polarity-dependent resistance switching in GeSbTe phase-change thin films

Autor: Andrew Pauza, Ramanathaswamy Pandian, Pim van den Dool, J. L. M. Oosthoek, George Palasantzas, Bart J. Kooi

Publikováno v: Applied Physics Letters, 95(25):252109

We show that polarity-dependent resistance switching in GeSbTe thin films depends strongly on Sb composition by comparing current-voltage characteristics in Sb-excess Ge(2)Sb(2+x)Te(5) and stoichiometric Ge(2)Sb(2)Te(5) samples. This type of switchin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6da35296938c868fb0b869b916965e5b
https://doi.org/10.1063/1.3276272

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The influence of resistance drift on measurements of the activation energy of conduction for phase-change material in random access memory line cells

Autor: Dirk J. Gravesteijn, J. L. M. Oosthoek, G. A. M. Hurkx, Bart J. Kooi, Martin Salinga, Daniel Krebs

Publikováno v: Journal of Applied Physics, 112(8):084506. AMER INST PHYSICS

Temporal drift of the amorphous resistance in phase-change random access memory (PRAM) is a temperature accelerated process. Increasing the temperature will speed up the drift process which is shown to affect measurements of the activation energy of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4deb98ee81ea1176068f96b3c224dc3
https://doi.org/10.1063/1.4759239

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