Zobrazeno 1 - 10
of 10
pro vyhledávání: '"J. L. Hurd"'
Autor:
Stefan Weber, Rainer Florian Schnabel, Lynne Gignac, Yun-Yu Wang, Lawrence A. Clevenger, R. C. Iggulden, J. L. Hurd, Ronald G. Filippi, Kenneth P. Rodbell
Publikováno v:
Journal of Applied Physics. 88:5093-5099
The microstructure was measured for AlCu lines, formed using either a traditional planar metal subtractive etch process or a newly developed hot AlCu-trench-damascene process. It was found that 0.35 μm wide damascene AlCu lines formed a large graine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d7584098554e4d50d269cc7ac237909
https://doi.org/10.1063/1.1314612
https://doi.org/10.1063/1.1314612
Autor:
M. J. C. van den Homberg, A.G. Dirks, A. H. Verbruggen, J. L. Hurd, S. Radelaar, Paul F. A. Alkemade
Publikováno v:
Microelectronic Engineering. 35:277-280
We have developed a process for the fabrication of single-crystalline and bamboo Al lines by recrystallization. A groove pattern of submicrometer dimensions is fabricated into an oxide layer by electron-beam-lithography and reactive-ion-etching. Blan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f834aaf561f652569c9b53fc20d6ca09
https://doi.org/10.1016/s0167-9317(96)00110-4
https://doi.org/10.1016/s0167-9317(96)00110-4
Autor:
Rainer Florian Schnabel, Kenneth P. Rodbell, Stefan Weber, Lynne Gignac, Lawrence A. Clevenger, R. C. Iggulden, J. L. Hurd, N. H. Schmidt
Publikováno v:
Applied Physics Letters. 72:326-328
The local texture in three types of patterned, thin-film, Al and AlCu interconnections on Si semiconductor devices is investigated by electron backscatter diffraction. Two types of standard planar metal structures were investigated: (1) blanket Al an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70f368cd088e1e84aa0c50db69c242f6
https://doi.org/10.1063/1.120726
https://doi.org/10.1063/1.120726
Publikováno v:
Applied Physics Letters. 70:318-320
The microstructure of Al lines resolidified in an amorphous groove pattern, is investigated by backscatter Kikuchi diffraction, x-ray diffraction, and transmission electron microscopy (TEM). If a temperature gradient is present during cooling, the Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5145505c906df0228102749892b4b59d
https://doi.org/10.1063/1.118403
https://doi.org/10.1063/1.118403
Autor:
Stefan J. Weber, L. Yang, G.Z. Lu, R.F. Schnabel, D. Tobben, Chenting Lin, J. L. Hurd, Sunny Chiang, R. Filippi, J. Ning, Kenneth P. Rodbell, T. Gou, R. Longo, M. Ronay, Roderick C. Mosely, L. Gignac, Mark Hoinkis, R. Ploessl, S. Voss, Clevenger Leigh Anne H, Jeffrey P. Gambino, Lian-Yuh Chen, G. Costrini, D.M. Dobuzinsky, J.F. Nuetzel, R. C. Iggulden
Publikováno v:
Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102).
As VLSI back end of line (BEOL) wiring is scaled to 0.175 /spl mu/m dimensions and sub-0.5 /spl mu/m pitches, the challenges to conventional Al RIE BEOL processes are the etching and the reliability of tall/narrow Al lines and the oxide gap fill and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5df924822bf795c7e3a2be9c96ec3aef
https://doi.org/10.1109/iitc.1998.704772
https://doi.org/10.1109/iitc.1998.704772
Autor:
J. L. Hurd, E.W. Kiewra, R. Ravikumar, R. Filippi, Stefan Weber, Roy C. Iggulden, L. Gignac, Kenneth P. Rodbell, Y. Y. Wang, C.-K. Hu, L. A. Clevenger, T. Kane, T. D. Sullivan, Rainer Florian Schnabel, T. Joseph
Publikováno v:
AIP Conference Proceedings.
Four different metallization processes for AlCu dual damascene are investigated with respect to their electromigration lifetime and compared to a metallization using subtractive metal etching. It is shown that the electromigration reliability lifetim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2597b741a5f75a404bdfd693baa9cb53
https://doi.org/10.1063/1.59917
https://doi.org/10.1063/1.59917
Publikováno v:
MRS Proceedings. 403
The effect of microstructure, including average grain size, grain size distribution, precipitate distribution and crystallographic texture, on the reliability of Al and Al-alloys is well documented. In this paper, the various x-ray methods available
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5f3be8add2f38a0df41a1d02105507c
https://doi.org/10.1557/proc-403-617
https://doi.org/10.1557/proc-403-617
Publikováno v:
Journal of Materials Research. 4:350-354
Isotropic hexagonal BN (h-BN) films were deposited on SiO2 crucibles used for synthesis of GaAs. Deposited films were analyzed for composition, morphology, and growth rates using proton resonant scattering, optical absorption, x-ray and electron diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6382312fb2894b35b3cdb825f676a6ea
https://doi.org/10.1557/jmr.1989.0350
https://doi.org/10.1557/jmr.1989.0350
Autor:
J L, Hurd
Publikováno v:
The Canadian nurse. 68(1)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::27eb86e133a4ab04043e68c681465534
https://pubmed.ncbi.nlm.nih.gov/4399191
https://pubmed.ncbi.nlm.nih.gov/4399191
Publikováno v:
Scopus-Elsevier
Microstructure is an important factor determining the lifetime of Al metallization lines. Deposition conditions, substrate material, alloying elements, and anneal treatments are the key parameters that influence microstructure. In this work we explor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::46fc181522e67db6e5c87fe62855dce7
http://www.scopus.com/inward/record.url?eid=2-s2.0-0029545056&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0029545056&partnerID=MN8TOARS
