Zobrazeno 1 - 10
of 37
pro vyhledávání: '"J. L. Herrera-Pérez"'
Autor:
Joel Díaz-Reyes, F. Angel-Huerta, J. F. Sánchez-Ramírez, J.S. Arias-Cerón, M. P. González-Araoz, J.G. Mendoza-Alvarez, J. L. Herrera-Pérez
Publikováno v:
Journal of Luminescence. 197:277-284
In this work reports the controlled synthesis and physical property characterization of nanoparticles of InP/ZnS type with core/shell structure obtained by the colloid chemistry method called "single-step procedure without precursor injection" at dif
Autor:
F. Angel-Huerta, M. P. González-Araoz, Joel Díaz-Reyes, J.S. Arias-Cerón, J.G. Mendoza-Alvarez, J. F. Sánchez-Ramírez, J. L. Herrera-Pérez
Publikováno v:
Journal of Materials Science: Materials in Electronics. 29:15649-15657
In this work reports the synthesis and the characterization of InP@ZnS nanocrystals prepared by the colloid chemistry method at different synthesis temperatures. Varying the reaction temperature from 100 to 320 °C was possible to control the formati
Autor:
J. L. Herrera-Pérez, Rodolfo Zanella, A. Tovar-Corona, O. Vázquez-Cuchillo, M.A. Lobo-Sánchez, J.I. Rodriguez-Mora
Publikováno v:
Materials Letters. 211:266-269
Cu nanoparticles (CuNPs) were biosynthesized by green nanotechnology and they showed a inhibitory power on the growth of Gram (+) and Gram (−). CuNPs synthesis (0) was performed at 65 °C from a solution of copper chloride and using as reducing cya
Publikováno v:
MRS Advances. 2:2883-2890
Using the liquid phase epitaxy technique (LPE) Ga0.86In0.14As0.13Sb0.87 layers lattice-matched to (100) Te-GaSb have been deposited, which were intentionally doped with Te and Zn in a wide range. The Raman spectra show that the layers become more def
Publikováno v:
Materials Science in Semiconductor Processing. 127:105729
Graphene oxide quantum dots were synthesized from carbonization, ultrasonic peeling, and oxidation of electrospun polyacrylonitrile (PAN) nanofibers. By energy scattering X-ray spectroscopy, a strong increase/decrease in the carbon/oxygen concentrati
Autor:
S. A. Tomás, M. Ramírez-López, Y. L. Casallas-Moreno, G. Villa-Martínez, J. L. Herrera-Pérez, P. Rodríguez-Fragoso, G. González de la Cruz, J.G. Mendoza-Alvarez, Alfredo Cruz-Orea, M. Macias, A.L. Martínez-López
Publikováno v:
Journal of Alloys and Compounds. 861:157936
Antimonide-based family holds the potential for developing a new generation of mid-infrared applications. Here, we report on the growth of InSbxAs1-x alloys on n − and p − type GaSb(100) substrates varying the Sb mole fraction ( x ) , using the l
Autor:
M. L. Gómez-Herrera, M. Pérez-González, D.A. Granada-Ramírez, A.A. Durán-Ledezma, Juan Pedro Luna-Arias, P. Rodríguez-Fragoso, J.S. Arias-Cerón, J.G. Mendoza-Alvarez, J. L. Herrera-Pérez, S. A. Tomás, F. Vázquez-Hernández, Alfredo Cruz-Orea
Publikováno v:
Applied Surface Science
Graphical abstract
Highlights • InP-In2O3 QDs are synthesized by a single-step chemical method without injection of hot precursors. • HR-TEM images show the synthesis of InP and In2O3 QDs. • The InP and In2O3 QDs size increases with the P(
Highlights • InP-In2O3 QDs are synthesized by a single-step chemical method without injection of hot precursors. • HR-TEM images show the synthesis of InP and In2O3 QDs. • The InP and In2O3 QDs size increases with the P(
Autor:
P. Rodríguez-Fragoso, D.M. Hurtado-Castañeda, C. Reyes-Betanzo, J. L. Herrera-Pérez, J.S. Arias-Cerón, J.G. Mendoza-Alvarez
Publikováno v:
Materials Science in Semiconductor Processing. 31:52-55
Current–voltage (I–V) and R0A curves and spectral response as a function of bias voltage and temperature of p–n indium gallium arsenide antimonide (In0.14Ga0.86As0.13Sb0.87)/n-GaSb photodiodes are presented. InGaAsSb quaternary alloys with a ba
Autor:
P. Rodríguez-Fragoso, D.A. Granada-Ramírez, Juan Pedro Luna-Arias, J. L. Herrera-Pérez, F. Vázquez-Hernández, J.S. Arias-Cerón, J.G. Mendoza-Alvarez
Quantum dots (QD's) have generated great scientific interest in the last decades mainly due to their unique optical and electrical properties, generating a great potential of new applications. In particular, there have been developed many different b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::464b6ae76a9fcda6b19556ed40bae153
https://doi.org/10.1016/b978-0-08-100716-7.00016-7
https://doi.org/10.1016/b978-0-08-100716-7.00016-7
Autor:
S. A. Tomás, M. Pérez-González, G. Villa-Martínez, Y. L. Casallas-Moreno, J. L. Herrera-Pérez, P. Rodríguez-Fragoso, J.G. Mendoza-Alvarez, M. Ramírez-López, M. L. Gómez-Herrera, A. Escobosa-Echavarría
Publikováno v:
Journal of Alloys and Compounds. 808:151690
In0.145Ga0.855AsySb1−y semiconductor alloys were grown on GaSb(100) substrates by varying the As content by liquid phase epitaxy (LPE). We demonstrated that the growth mechanism of these quaternary alloys is mainly constituted by two stable bonding