Zobrazeno 1 - 10
of 22
pro vyhledávání: '"J. L. Duggan"'
Autor:
Manuel Quevedo-Lopez, M. El-Bouanani, Bruce E. Gnade, Mark R. Visokay, J. L. Duggan, Swarnagowri Addepalli, Robert M. Wallace, M. Douglas, Luigi Colombo
Publikováno v:
Applied Physics Letters. 79:4192-4194
The interdiffusion of Hf and Si from high-κ gate dielectric candidate (HfO2)1−x(SiO2)x thin films deposited on Si (100) was studied using x-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, high resolution transmissio
Autor:
M. El-Bouanani, M. J. Bevan, Robert M. Wallace, Luigi Colombo, Bruce E. Gnade, Mark R. Visokay, Swarnagowri Addepalli, M. Douglas, Manuel Quevedo-Lopez, J. L. Duggan
Publikováno v:
Applied Physics Letters. 79:2958-2960
Monochromatic x-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, and Rutherford backscattering spectrometry are used to study the outdiffusion of Zr from the alternate gate dielectric candidate ZrSixOy thin films deposi
Autor:
J. L. Duggan, D. Desmarais
Publikováno v:
American Journal of Physics. 59:56-62
An analysis is made of the spectra resulting from the process of internal conversion to measure the inner‐shell binding energy of certain nuclides. Use is made of the K/L ratio of the internal conversion coefficients to predict spin and parity chan
Autor:
J. L. Duggan, D. Desmarais
Publikováno v:
American Journal of Physics. 58:1079-1085
A nuclear experiment has been designed for use in the undergraduate laboratory. Following a theoretical treatment of alpha barrier penetration and the kinematics and Q value of alpha decay, a semiclassical calculation is made for the half‐life for
Autor:
Aditya Agarwal, T. E. Haynes, J. L. Duggan, H.-J. Gossmann, Lourdes Pelaz, V. C. Venezia, D. C. Jacobson, D. J. Eaglesham
Publikováno v:
ResearcherID
In this work we demonstrate that the defects that are created by 2-MeV Si ions can interact with dopant atoms both during implantation and during post-implant annealing. We show that the interstitials and vacancies created during MeV Si implantation
Publikováno v:
AIP Conference Proceedings.
The charge state distributions (CSD) produced during molecular dissociation are important to both Trace Element Accelerator Mass Spectrometry (TEAMS) and the ion implantation industry. The CSD of 1.3–1.7 MeV SiN+, SiMg+, SiMn+, and SiZn+ molecules
Autor:
M. El Bouanani, David S. Walsh, J. L. Duggan, T.J. Aton, S.N. Renfrow, Floyd D. McDaniel, Barney Lee Doyle, B. N. Guo
Publikováno v:
AIP Conference Proceedings.
As feature sizes of Integrated Circuits (ICs) continue to shrink, the sensitivity of these devices, particularly SRAMs and DRAMs, to natural radiation is increasing. In this paper, the Ion Beam Induced Charge Collection (IBICC) technique is utilized
Autor:
S. Matteson, J. L. Duggan, F. D. McDaniel, D. L. Weathers, F. Picton, B. F. Hughes, Jian-Yue Jin
Publikováno v:
AIP Conference Proceedings.
Nuclear Reaction Analysis (NRA) using the 19F(p,αγ)16O resonance reaction is a powerful method of fluorine depth profiling. We have used this method to study the fluorine uptake phenomenon in mineral flint, which could potentially develop into a me
Autor:
Jian-Yue Jin, B. F. Hughes, J. L. Duggan, J. P. Biscar, D. L. Weathers, S. Matteson, F. D. McDaniel
Publikováno v:
AIP Conference Proceedings.
The 19F(p,αγ)16O resonant nuclear reaction at a proton energy of 872 keV is used to study the fluorine penetration in archaeological flints and other materials. The experimentally acquired data presented as the γ-ray yield curve Y(E) is the convol
Autor:
D. Desmarais, J. L. Duggan
Publikováno v:
American Journal of Physics. 52:507-513
The interaction of α particles with low atomic number elements has been studied in an attempt to determine the inner‐shell ionization cross section. These cross sections were determined by measuring the characteristic x rays that were produced whe