Zobrazeno 1 - 8
of 8
pro vyhledávání: '"J. L. Di-Maria"'
Autor:
Alexis Farcy, M. Fayolle, F. Jourdan, M. Assous, Joaquim Torres, V. Vidal, J. L. Di Maria, H. Feldis, Vincent Arnal
Publikováno v:
Microelectronic Engineering. 70:368-372
As high-performance metal-insulator-metal capacitors are required for new technologies, an innovative architecture was developed with standard damascene processes used for copper interconnect realization. Low-cost damascene capacitors were integrated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e20633f25a8e9744d7b30af5a1810fc
https://doi.org/10.1016/s0167-9317(03)00468-4
https://doi.org/10.1016/s0167-9317(03)00468-4
Autor:
George Chen, Emek Yesilada, G. Kerrien, R. Howell, Catherine Martinelli, Naoya Hayashi, L. Depre, F. Foussadier, Jonathan Planchot, James N. Wiley, Hiroyuki Miyashita, J. C. Le Denmat, L. Perraud, Syougo Narukawa, Florent Vautrin, C. Gardin, Alexandre Villaret, Hiroshi Mohri, J. L. Di-Maria, J.-S. Wang, S. Bai, B. Vandewalle, Frederic Robert, Kawashima Satoshi, Tadahiro Takigawa, Katsuya Hayano, V. Arnoux, Vincent Farys, Yorick Trouiller, Anthony Vacca, Mazen Saied, Frank Sundermann
Publikováno v:
SPIE Proceedings.
In the continuous battle to improve critical dimension (CD) uniformity, especially for 45-nanometer (nm) logic advanced products, one important recent advance is the ability to accurately predict the mask CD uniformity contribution to the overall glo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac7835c81c5f7ac93b52cc37cb34b8b5
https://doi.org/10.1117/12.793037
https://doi.org/10.1117/12.793037
Autor:
Jonathan Planchot, Amandine Borjon, Vincent Farys, Yorick Trouiller, Emek Yesilada, Christophe Couderc, Frederic Robert, Nicolo Morgana, Bill Wilkinson, Jean Christophe Urbani, Yves Rody, J. L. Di-Maria, Jerome Belledent, Christian Gardin, Frank Sundermann, Franck Foussadier, G. Kerrien, Catherine Martinelli, Isabelle Schanen, Florent Vautrin, Laurent LeCam, Mazen Saied
Publikováno v:
SPIE Proceedings.
The perpetual shrinking in critical dimensions in semiconductor devices is driving the need for increased resolution in optical lithography. Increasing NA to gain resolution also increases Optical Proximity Correction (OPC) model complexity. Some opt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b32f3aa447c96f40cbe921d420a2bf8
https://doi.org/10.1117/12.752613
https://doi.org/10.1117/12.752613
Autor:
Naoya Hayashi, Frederic Robert, James N. Wiley, Jonathan Planchot, George Chen, Florent Vautrin, Frank Sundermann, Anthony Vacca, Hiroyuki Miyashita, Yorick Trouiller, F. Foussadier, G. Kerrien, Syougo Narukawa, Kawashima Satoshi, J. L. Di-Maria, Katsuya Hayano, Tadahiro Takigawa, Hiroshi Mohri, Catherine Martinelli, Vincent Farys
Publikováno v:
SPIE Proceedings.
One of the most critical points for accurate OPC is to have accurate models that properly simulate the full process from the mask fractured data to the etched remaining structures on the wafer. In advanced technology nodes, the CD error budget become
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::763ed588df81f0bf29c1cee89d189683
https://doi.org/10.1117/12.752609
https://doi.org/10.1117/12.752609
Autor:
Jonathan Planchot, Catherine Martinelli, Patrick Montgomery, Christophe Couderc, Emek Yesilada, Frederic Robert, Laurent LeCam, G. Kerrien, J. L. Di-Maria, Nicolo Morgana, Bill Wilkinson, Amandine Borjon, Yorick Trouiller, Jean-Christophe Urbani, Jerome Belledent, Franck Foussadier, Florent Vautrin, Mazen Saied, Yves Rody, Christian Gardin, Frank Sundermann, Jean-Damien Chapon, Vincent Farys
Publikováno v:
SPIE Proceedings.
Patterning isolated trenches for bright field layers such as the active layer has always been difficult for lithographers. This patterning is even more challenging for advanced technologies such as the 45nm node where most of the process optimization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e71cc7f64b7fe94a9a02e09c87c79f7e
https://doi.org/10.1117/12.728960
https://doi.org/10.1117/12.728960
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