Zobrazeno 1 - 10
of 48
pro vyhledávání: '"J. L. Demenet"'
Publikováno v:
Microscopy of Semiconducting Materials, 1987
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e95bfcb45baa6371faf06409fe81586
https://doi.org/10.1201/9781003069621-57
https://doi.org/10.1201/9781003069621-57
Publikováno v:
physica status solidi c. 10:11-15
Silicon micropillars obtained by FIB from Floating Zone silicon single crystal have been deformed in situ in a SEM between room temperature and 400 °C. Pillars with axis were studied in order to promote single slip deformation. Mechanical data as a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::387abe2630f6d4ec2eecc2cc11b9371c
https://doi.org/10.1002/pssc.201200546
https://doi.org/10.1002/pssc.201200546
Publikováno v:
Acta Materialia. 58:1426-1440
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb95fe2023edfd55522c33841fa93ba3
https://doi.org/10.1016/j.actamat.2009.10.052
https://doi.org/10.1016/j.actamat.2009.10.052
Publikováno v:
Acta Materialia. 58:1418-1425
Indium antimonide (InSb) has been plastically deformed over a wide temperature range, from 400 down to −176 °C (see the companion paper: Kedjar B, Thilly L, Demenet JL, Rabier J. Acta Mater 2009) and transmission electron microscopy was used to ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37d0c36c8cab62f3d0ade055d4a790dd
https://doi.org/10.1016/j.actamat.2009.10.050
https://doi.org/10.1016/j.actamat.2009.10.050
Publikováno v:
physica status solidi c. 6:1801-1806
An analysis of the morphology of the extended defects revealed behind dislocation in the slip plane of silicon is presented. These extended defects show an electrical activity contradictorily to dislocations themselves; this is confirmed by Electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f431473716375c05b871405cf76df22
https://doi.org/10.1002/pssc.200881464
https://doi.org/10.1002/pssc.200881464
Publikováno v:
Materials Science and Engineering: A. 478:140-146
Most hydrostatic pressure deformation techniques necessitate the use of a confining medium to apply the pressure. In the case of solid confinement, the embedding medium may modify the specimen stress tensor hydrostaticity. In this study, parallelepip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0668ffb765a2c4c16e073748689caae
https://doi.org/10.1016/j.msea.2007.05.119
https://doi.org/10.1016/j.msea.2007.05.119
Publikováno v:
physica status solidi c. 4:2929-2933
Compression tests under confining pressure are performed with a Paterson press in order to deform 4H-SiC plastically below the brittle-to-ductile transition temperature. Deformation microstructure in this regime is analysed using conventional and hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c59e475badbdbaacf65018fc924d8be9
https://doi.org/10.1002/pssc.200675438
https://doi.org/10.1002/pssc.200675438
Publikováno v:
Materials Science and Engineering: A. :97-100
Dislocations in silicon are nucleated under high stresses as perfect ones in the shuffle set. It is shown that the same nucleation mechanism operates in hexagonal 4H-polytype SiC but, in contrast to silicon, perfect-shuffle configurations are unstabl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23d819b934116ff06aafce2c1987fd76
https://doi.org/10.1016/j.msea.2005.03.080
https://doi.org/10.1016/j.msea.2005.03.080
Publikováno v:
Materials Science and Engineering: A. :124-128
The dislocation substructures of silicon deformed under hydrostatic pressure at room temperature in various deformation conditions have been characterized by transmission electron microscopy. This confirms the occurrence of deformation mechanisms by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0918b3c0bc5494669cc2a6ef06ca044
https://doi.org/10.1016/j.msea.2004.01.082
https://doi.org/10.1016/j.msea.2004.01.082
Autor:
Hartmut S. Leipner, V. V. Mikhnovich, Jacques Rabier, V. Bondarenko, H. Gu, Zhu Wang, Reinhard Krause-Rehberg, J.-L. Demenet
Publikováno v:
physica status solidi (a). 201:2021-2028
The article [1] describes specific features of positron trapping in silicon plastically deformed at room temperature. The results are related to the dislocation core structure and the inhomogeneous deformation. The picture shows the probability densi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::974e8a38f7855eb8bbbae7797ad8bafa
https://doi.org/10.1002/pssa.200306819
https://doi.org/10.1002/pssa.200306819