Zobrazeno 1 - 2
of 2
pro vyhledávání: '"J. L. Azar"'
Publikováno v:
Journal of Applied Physics. 93:3057-3062
Epitaxial quality of Ge layers on GaAs(001), as well as the quality of the Si capping layers, were investigated in situ by reflection high-energy electron diffraction during growth and, subsequently, by scanning electron and scanning probe microscopi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::180caebe0fdc4b849ea55cf684f6aeb9
https://doi.org/10.1063/1.1542656
https://doi.org/10.1063/1.1542656
Publikováno v:
Journal of Nuclear Materials. 229:10-14
The grain boundary diffusion of Ni in α-Zr is studied in order to compare it with Fe and Co diffusion in the same boundaries and with Ni diffusion in the interphase boundaries of a Zr-2.5% Nb alloy. An estimation of the segregation factor of Ni in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e84d79b125301cbec0b123bc5d619e3
https://doi.org/10.1016/0022-3115(95)00213-8
https://doi.org/10.1016/0022-3115(95)00213-8