Výsledky vyhledávání - "J. L. A. Alves"

Theoretical study of dilute GaN–4d transition metal alloys

Autor: Rafael Nogueira, R. de Paiva, J. L. A. Alves

Publikováno v: Journal of Physics: Condensed Matter. 18:8589-8601

Electronic calculations were carried out for the dilute ordered alloys Ga(0.94) (TM)(0.06)N (TM = Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, and Ag) in the zinc-blende structure. The theoretical framework used was the density functional theory, using the local s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::435edfdf7ab6c27dd6201e267127aafa
https://doi.org/10.1088/0953-8984/18/37/017

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Cubic binary compounds MnN and MnAs and diluted magnetic semiconductor alloys: a first-principle study

Autor: J. L. A. Alves, L. M. R. Scolfaro, R. A. Nogueira, J. R. Leite, R. de Paiva

Publikováno v: Journal of Magnetism and Magnetic Materials. 288:384-396

In this work we report ab initio calculations of the electronic structures of the binary compounds MnN and MnAs, and of the diluted magnetic semiconductor alloys Ga 1 - x Mn x N ( x = 0.06 ; 0.03) in the zinc-blende phase. We use the theoretical loca

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https://doi.org/10.1016/j.jmmm.2004.09.124

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Electronic structure and magnetic properties of Al1−xMnxN alloys

Autor: R. de Paiva, J. L. A. Alves, R. A. Nogueira

Publikováno v: Journal of Applied Physics. 96:6565-6568

We apply a first-principles method based on the density functional theory within the local spin-density approximation, and the full-potential linear augmented plane-wave method, to calculate the electronic structure and magnetic properties of dilute

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1c63ca41825afe8349bf1bb3fb781552
https://doi.org/10.1063/1.1818351

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Vibrational properties of PPP and PPV

Autor: H. W. Leite Alves, R. L. de Sousa, J. L. A. Alves

Publikováno v: Materials Science and Engineering: C. 24:601-605

We present, in this work, our preliminary results for the structural properties and the vibrational modes for the poly- para -phenylene (PPP), for the poly- para -phenylene-vinylene (PPV), and for their respective oligomers. The calculations were don

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https://doi.org/10.1016/j.msec.2004.08.049

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The effects of shape and size nonuniformity on the absorption spectrum of semiconductor quantum dots

Autor: J L A Alves, D L Ferreira

Publikováno v: Nanotechnology. 15:975-981

The optical absorption coefficient of an inhomogeneous quantum dot system is calculated analytically and numerically. The quantum dots are approximated as spheres whose surfaces constitute infinite potential barriers, with a size distribution describ

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https://doi.org/10.1088/0957-4484/15/8/019

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Theoretical optical parameters for III-nitride semiconductors

Autor: L.C. de Carvalho, R. de Paiva, J. L. A. Alves, E. Silva Pinto, Horácio W. Leite Alves

Publikováno v: Microelectronics Journal. 34:721-724

The III-nitride compounds (GaN, AlN, BN, and InN) are semiconductor materials which are promising for application in optoelectronics. They find applications in light emitting diodes, laser diodes and luminescent alloys. In the present work we calcula

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https://doi.org/10.1016/s0026-2692(03)00111-3

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Adsorption of Ga, In and N over GaAs(110) Surfaces

Autor: H. W. Leite Alves, J. L. A. Alves, A. de Paiva

Publikováno v: physica status solidi (c). :417-420

We present, in this work, our preliminary results of a systematic theoretical study of the adsorption of Ga, In and N over GaAs(110) surfaces. We analyze the changes in the bond lengths and in the bond angles before and after deposition, as well as t

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https://doi.org/10.1002/pssc.200390077

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Planar force-constant method for lattice dynamics of cubic III-nitrides

Autor: Luisa Maria Ribeiro Scolfaro, J. R. Leite, H. W. Leite Alves, J. L. A. Alves

Publikováno v: Brazilian Journal of Physics v.32 n.2a 2002
Brazilian Journal of Physics
Sociedade Brasileira de Física (SBF)
instacron:SBF
Scopus-Elsevier
Brazilian Journal of Physics, Volume: 32, Issue: 2a, Pages: 448-451, Published: JUN 2002

Using the density-functional theory within the Full Potential Linear Augmented Plane-Wave (FP-LAPW) method, we have calculated, in this work, the equation of state, the effective charges and the phonon dispersion along [100] and [111] directions for

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5c2380c51dc2c38be3a76c630599bfa1
https://doi.org/10.1590/s0103-97332002000200059

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