Zobrazeno 1 - 10
of 26
pro vyhledávání: '"J. Kvietkova"'
Autor:
Wolfgang Löffler, S. Li, Michael Hetterich, J. Lupaca-Schomber, Heinz Kalt, Dimitri Litvinov, T. Passow, B. Daniel, J. Kvietkova, Dagmar Gerthsen, J. Fallert
Publikováno v:
physica status solidi c. 3:3943-3946
The influence of the growth conditions during molecular-beam epitaxy on the properties of InAs/GaAs quantum dot structures were systematically investigated by low temperature photoluminescence spectroscopy and transmission electron microscopy. The ci
Autor:
J. Lupaca-Schomber, J. Fallert, T. Passow, Dagmar Gerthsen, Heinz Kalt, B. Daniel, Wolfgang Löffler, J. Kvietkova, Dimitri Litvinov, Michael Hetterich, D. Tröndle, E. Tsitsishvili
Publikováno v:
physica status solidi c. 3:2406-2409
We report on the injection of electron spins into InGaAs quantum dots with an efficiency of up to 60%. This injection is observed in p-i-n light-emitting diode structures using the diluted magnetic semiconductor ZnMnSe as spin aligner (spin-LED). The
Autor:
T. Passow, Heinz Kalt, Dimitri Litvinov, B. Daniel, Michael Hetterich, D. Tröndle, Wolfgang Löffler, J. Lupaca-Schomber, Dagmar Gerthsen, J. Kvietkova
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 32:434-437
We report on electrical spin injection into InGaAs-based nanostructures through a semi-magnetic ZnMnSe layer in a magnetic field. We show an optical polarization degree of the electro-luminescence of up to 35% in InGaAs quantum wells and up to 14% in
Publikováno v:
physica status solidi (c). :1472-1475
We present experimental investigation of the optical gain in GaInNAs/GaAs multi-quantum well structures using the variable stripe length method. The amplified spontaneous edge emission was measured at different excitation intensities and stripe lengt
Publikováno v:
Thin Solid Films. :228-230
The semimagnetic ternary semiconductor material ZnMnSe is a suitable candidate for the use in optoelectronic devices either as a spin aligner or a waveguiding layer. In our work we are studying the optical properties of Zn 1− x Mn x Se layers grown
Publikováno v:
AIP Conference Proceedings.
We present the experimental investigation of the optical gain in GaInNAs/GaAs multi‐quantum well laser structures using the variable stripe length method. The low temperature gain was typically in the order of 100 cm−1, while at room temperature
Autor:
Daniel Spemann, Dimitri Litvinov, M. Schubert, Dagmar Gerthsen, B. Daniel, J. Kvietkova, Michael Hetterich
Publikováno v:
Physical Review B. 70
Publikováno v:
The Fourth International Conference on Advanced Semiconductor Devices and Microsystem.
We present the experimental investigation of the optical gain in GaInNAs/GaAs multi-quantum well structures using the variable stripe length method. The amplified spontaneous edge emission was measured at different excitation intensities and stripe l
Autor:
M. Biaho, Volker Gottschalch, J. Kvietkova, Bernd Rheinländer, J. Skrinjarova, Jozef Kováč, S. Hardt, Jan Jakabovic
Publikováno v:
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386).
We present a resonant cavity LED with an InAs monolayer active region embedded in an AlAs/AlGaAs vertical resonant cavity. In comparison to the structures without a resonator but with the same active region the realized resonant cavity LED exhibited
Autor:
C. Klingshirn, Michael Hetterich, D. Tröndle, J. Fallert, J. Kvietkova, Dimitri Litvinov, Heinz Kalt, T. Passow, J. Lupaca-Schomber, Dagmar Gerthsen, M. Grün, Wolfgang Löffler, B. Daniel
Publikováno v:
Applied Physics Letters. 88:062105
We report on efficient injection of electron spins into InGaAs-based nanostructures. The spin light-emitting diodes incorporate an InGaAs quantum well or quantum dots, respectively, as well as a semimagnetic ZnMnSe spin-aligner layer. We show a circu