Zobrazeno 1 - 10
of 25
pro vyhledávání: '"J. Kvietkova"'
Autor:
Wolfgang Löffler, S. Li, Michael Hetterich, J. Lupaca-Schomber, Heinz Kalt, Dimitri Litvinov, T. Passow, B. Daniel, J. Kvietkova, Dagmar Gerthsen, J. Fallert
Publikováno v:
physica status solidi c. 3:3943-3946
The influence of the growth conditions during molecular-beam epitaxy on the properties of InAs/GaAs quantum dot structures were systematically investigated by low temperature photoluminescence spectroscopy and transmission electron microscopy. The ci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74115db62e7fa8b143450e39d28c6f0e
https://doi.org/10.1002/pssc.200671556
https://doi.org/10.1002/pssc.200671556
Autor:
J. Lupaca-Schomber, J. Fallert, T. Passow, Dagmar Gerthsen, Heinz Kalt, B. Daniel, Wolfgang Löffler, J. Kvietkova, Dimitri Litvinov, Michael Hetterich, D. Tröndle, E. Tsitsishvili
Publikováno v:
physica status solidi c. 3:2406-2409
We report on the injection of electron spins into InGaAs quantum dots with an efficiency of up to 60%. This injection is observed in p-i-n light-emitting diode structures using the diluted magnetic semiconductor ZnMnSe as spin aligner (spin-LED). The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93fdfa1c39a0c8131c9813e5e8333dfa
https://doi.org/10.1002/pssc.200668004
https://doi.org/10.1002/pssc.200668004
Publikováno v:
physica status solidi (c). :1472-1475
We present experimental investigation of the optical gain in GaInNAs/GaAs multi-quantum well structures using the variable stripe length method. The amplified spontaneous edge emission was measured at different excitation intensities and stripe lengt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f6e319544f52284b2f3ab0107bca376
https://doi.org/10.1002/pssc.200303204
https://doi.org/10.1002/pssc.200303204
Publikováno v:
Thin Solid Films. :228-230
The semimagnetic ternary semiconductor material ZnMnSe is a suitable candidate for the use in optoelectronic devices either as a spin aligner or a waveguiding layer. In our work we are studying the optical properties of Zn 1− x Mn x Se layers grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a993cb962ea16785c2079b81941d5c47
https://doi.org/10.1016/j.tsf.2003.11.201
https://doi.org/10.1016/j.tsf.2003.11.201
Publikováno v:
AIP Conference Proceedings.
We present the experimental investigation of the optical gain in GaInNAs/GaAs multi‐quantum well laser structures using the variable stripe length method. The low temperature gain was typically in the order of 100 cm−1, while at room temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::daefc0ed35f284a3146c9796c8f21ef0
https://doi.org/10.1063/1.1994703
https://doi.org/10.1063/1.1994703
Autor:
Daniel Spemann, Dimitri Litvinov, M. Schubert, Dagmar Gerthsen, B. Daniel, J. Kvietkova, Michael Hetterich
Publikováno v:
Physical Review B. 70
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b862aec8fb03f523e7302c848cd1552
https://doi.org/10.1103/physrevb.70.045316
https://doi.org/10.1103/physrevb.70.045316
Publikováno v:
The Fourth International Conference on Advanced Semiconductor Devices and Microsystem.
We present the experimental investigation of the optical gain in GaInNAs/GaAs multi-quantum well structures using the variable stripe length method. The amplified spontaneous edge emission was measured at different excitation intensities and stripe l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ea400728ad6eea2376a0148c834062b
https://doi.org/10.1109/asdam.2002.1088500
https://doi.org/10.1109/asdam.2002.1088500
Autor:
M. Biaho, Volker Gottschalch, J. Kvietkova, Bernd Rheinländer, J. Skrinjarova, Jozef Kováč, S. Hardt, Jan Jakabovic
Publikováno v:
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386).
We present a resonant cavity LED with an InAs monolayer active region embedded in an AlAs/AlGaAs vertical resonant cavity. In comparison to the structures without a resonator but with the same active region the realized resonant cavity LED exhibited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::107da28c3f70ff848001ef2e7a54d50b
https://doi.org/10.1109/asdam.2000.889468
https://doi.org/10.1109/asdam.2000.889468
Autor:
C. Klingshirn, Michael Hetterich, D. Tröndle, J. Fallert, J. Kvietkova, Dimitri Litvinov, Heinz Kalt, T. Passow, J. Lupaca-Schomber, Dagmar Gerthsen, M. Grün, Wolfgang Löffler, B. Daniel
Publikováno v:
Applied Physics Letters. 88:062105
We report on efficient injection of electron spins into InGaAs-based nanostructures. The spin light-emitting diodes incorporate an InGaAs quantum well or quantum dots, respectively, as well as a semimagnetic ZnMnSe spin-aligner layer. We show a circu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1067585e4f25d381c9b3f6cf006f6217
https://doi.org/10.1063/1.2172221
https://doi.org/10.1063/1.2172221
Autor:
Jean Massies, Benjamin Damilano, J. Kvietkova, A M Vasson, Pierre Disseix, L. Siozade, Joël Leymarie, Nicolas Grandjean
Thermally detected optical absorption (TDOA) and photoluminescence experiments were carried out on InGaN/GaN multi-quantum well (MQW) structures grown by molecular beam epitaxy on (0001) sapphire substrates. The absorption coefficient of the QW was e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::255763c3b2d6029a7ec2b9885ade65a0
https://infoscience.epfl.ch/record/152739
https://infoscience.epfl.ch/record/152739
