Zobrazeno 1 - 10
of 46
pro vyhledávání: '"J. Koprinarova"'
Autor:
B. S. Zafirova, B. Georgieva, M. Vasileva, Julien Grand, Svetlana Mintova, E.I. Karakoleva, Tsvetanka Babeva, Andrey Andreev, J. Koprinarova
Publikováno v:
Sensors and Actuators B: Chemical
Sensors and Actuators B: Chemical, Elsevier, 2017, 248, pp.359-366. ⟨10.1016/j.snb.2017.03.157⟩
Sensors and Actuators B: Chemical, Elsevier, 2017, 248, pp.359-366. ⟨10.1016/j.snb.2017.03.157⟩
Coupler comprising side-polished optical fiber and tantalum pentoxide (Ta2O5) waveguide coated with 330 nm hydrophobic MFI-type zeolite films was utilized as chemical sensor for acetone vapors. The thickness of the zeolite films was selected through
Publikováno v:
Thin Solid Films. 516:8684-8692
Ti-doped Ta 2 O 5 (∼ 10; 30 nm) obtained by sputtering was studied with respect to their dielectric and electrical properties. The incorporation of Ti was performed by two original methods — surface doping where Ti layer was deposited on the top
Publikováno v:
physica status solidi (a). 202:330-336
The optical properties of rf sputtered (30; 52 nm) Ta2O5 before and after O2 annealing at 1173 K have been investigated in the terms of storage capacitor applications for high density dynamic memories. Refractive index and thickness of the films are
Autor:
O. B. Okhrimenko, D. Virovska, O. S. Lytvym, R. V. Konakova, J. Koprinarova, Elena Atanassova, V. V. Schinkarenko, Vadym Fedorovych Mitin
Publikováno v:
Microelectronics Reliability. 45:123-135
The paper presents results of the effect of microwave irradiation at room temperature on the properties of thin layers of tantalum pentoxide deposited on Si by rf sputtering. Electrical characterization is performed in conjunction with Auger electron
Publikováno v:
Microelectronics Journal. 33:907-920
The effect of the oxidation temperature (673–873 K) on the microstructural and electrical properties of thermal Ta2O5 thin films on Si has been studied. Auger electron spectroscopy and X-ray photoelectron spectroscopy results revealed that the film
Publikováno v:
Vacuum. 58:344-350
The dependence of the conductivity of thin TiO 2 layers on the relative ambient humidity and on the thickness of the films is presented. The TiO 2 thin films were deposited by reactive magnetron sputtering of a Ti targets in an Ar+O 2 mixture in a co
Publikováno v:
Vacuum. 51:177-180
The possibility of obtaining palladium silicide layers by rapid thermal annealing (RTA) has been studied. Palladium layers of 300 and 1000 A thicknesses were deposited by r.f. sputtering on Si substrates. The samples were subjected to RTA at 800, 100
Publikováno v:
Journal of Materials Research. 12:2511-2514
In this work the properties of polycrystalline silicon layers obtained by rapid thermal annealing have been discussed. Amorphous silicon layers with thickness of 3000 Å have been deposited on silicon wafers in rf sputtering system. The layers were a
Publikováno v:
Applied Surface Science. 115:128-134
The influence of the reactive gas mixture and substrate temperature on the chemical composition of reactively rf magnetron sputtered TiO2 thin layers on Si substrates has been studied. A detailed investigation has been made of the transition layer be
Publikováno v:
Vacuum. 47:1333-1336
The dependence of the dielectric constant ϵ rr , chemical composition and crystalline structure of thin titanium oxide films, deposited onto Si substrates, on reactive sputtering conditions has been studied using an RF magnetron operated under diffe