Zobrazeno 1 - 10
of 48
pro vyhledávání: '"J. Kolnik"'
Akademický článek
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Autor:
Joseph F. Dasta, Michael L. Cheatham, Lyle J. Kolnik, Sandra L. Kane-Gill, Kara L. Birrer, Gail Gesin
Publikováno v:
Journal of Critical Care. 26:122-126
Purpose Limited information addressing the safety and efficacy of diazepam in the intensive care unit, particularly in trauma patients, is available. The purpose of this study is to evaluate the safety and efficacy of diazepam when used in routine cl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d75997655ff1808e74a951830133483
https://doi.org/10.1016/j.jcrc.2010.09.008
https://doi.org/10.1016/j.jcrc.2010.09.008
Publikováno v:
Solid-State Electronics. 50:1450-1460
The scaling of CMOS technology to 100 nm and below and the endless pursuit of higher operating frequencies drives the need to accurately model effects such as gate leakage and the deterioration of transport characteristics that dominate at those feat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c50596716b55b2a8ee3933e9bfae5d3
https://doi.org/10.1016/j.sse.2006.06.020
https://doi.org/10.1016/j.sse.2006.06.020
Publikováno v:
IEEE Microwave and Wireless Components Letters. 16:290-292
One of the most challenging problems encountered in developing RF circuits is accurate prediction of MOS behavior at microwave signal and data frequencies. An attempt is made in this work to accurately model the device input impedance for the 1-20-GH
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88a24a9ba96e56f25ecc8fec9840d200
https://doi.org/10.1109/lmwc.2006.873454
https://doi.org/10.1109/lmwc.2006.873454
Publikováno v:
VLSI-SoC
AC coupling in a transmission link is preferred and often required for the functioning of high speed transceivers. But at data rate of 1OGbps and beyond, both the external AC coupling and the conventional on-chip AC coupling approaches bring in heavy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3389e498593d6b0c0cccffd5c5f20d3a
https://doi.org/10.1109/vlsisoc.2007.4402477
https://doi.org/10.1109/vlsisoc.2007.4402477
Autor:
P.R. Mukund, K. Paradis, C. Washburn, S.R. Bandi, J. Kolnik, S. Sridharan, J. Burleson, S. Howard
Publikováno v:
ISCAS
Extraction plays an important role in the performance of device models especially in the high frequency regime. The present day extraction techniques mostly use a grounded source or common source (CS) device configuration. The models extracted from t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::055353d2304fecb20e44d04fb70debd0
https://doi.org/10.1109/iscas.2006.1693334
https://doi.org/10.1109/iscas.2006.1693334
Publikováno v:
2005 International Semiconductor Device Research Symposium.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec986ef664c517f53353095206df8dd1
https://doi.org/10.1109/isdrs.2005.1596141
https://doi.org/10.1109/isdrs.2005.1596141
Autor:
S. Howard, C. Washburn, S.R. Bandi, J. Burleson, P.R. Mukund, J. Kolnik, Minxuan Liu, K. Paradis
Publikováno v:
ISCAS (5)
Accurate prediction of multi-GHz CML dependency on data run-time variation requires precise device models at those frequencies. Inconsistencies caused in the CML by run-time variations of the input data are clearly demonstrated. Further, an accurate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f852865370598646be6abb695f5f8072
https://doi.org/10.1109/iscas.2005.1465782
https://doi.org/10.1109/iscas.2005.1465782
Autor:
T. Das, C. Washburn, P.R. Mukund, J. Kolnik, J. Burleson, K. Paradis, Jung-Geau Jang, S. Howard
Publikováno v:
VLSI Design
In this paper, we present the impact of both process and dimensional scaling on input loss (S/sub 11/) prediction of MOSFET's at GHz frequencies. We study the distributed gate effect, the non-quasi static effect, and report a drop in the resistive co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6da494bda5aa5f6298f233b0a8a8c096
https://doi.org/10.1109/icvd.2005.86
https://doi.org/10.1109/icvd.2005.86
