Zobrazeno 1 - 10
of 29
pro vyhledávání: '"J. Kirtsch"'
Publikováno v:
Microelectronic Engineering. 33:211-216
Copper is attracting increasing interest as a material for interconnections in future high speed ULSI circuits because of its low electrical resisivity and high electromigration performance [1]. Obviously, copper metallization has entered the stage o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5376305ae7b8b7e0bb1531951cb28a79
https://doi.org/10.1016/s0167-9317(96)00047-0
https://doi.org/10.1016/s0167-9317(96)00047-0
Publikováno v:
Microelectronics Reliability. 36:1827-1830
A key issue in modern microelectronics is to improve and optimise device performance and reliability without excessively increasing fabrication costs. In this paper we will show how it is possible to improve the reliability of single-polysilicon quas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c37cb3b6b85afa130ce1f71ba33530d6
https://doi.org/10.1016/0026-2714(96)00207-7
https://doi.org/10.1016/0026-2714(96)00207-7
Publikováno v:
Microelectronic Engineering. 19:547-550
This paper presents the characteristics of bipolar transistors developed in a submicron CMOS technology. The collector is formed by high energy phosphorus implantation as is the PMOS well (``retrograde'' well). The performance of such devices is eval
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9793396ec47e779e4a1f4ec36b8bc9f2
https://doi.org/10.1016/0167-9317(92)90493-b
https://doi.org/10.1016/0167-9317(92)90493-b
Publikováno v:
IEEE Electron Device Letters. 17:434-436
We demonstrate that fluorine incorporation in the polysilicon emitter of n-p-n double-diffused bipolar transistors during BF/sub 2/ implantation at a dose of 1/spl times/10/sup 15/ cm/sup -2/ significantly alters the device electrical characteristics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f68e44b0630d517def35eef5d366fd97
https://doi.org/10.1109/55.536284
https://doi.org/10.1109/55.536284
Autor:
S. Niel, O. Rozeau, L. Ailloud, C. Hernandez, P. Llinares, M. Guillermet, J. Kirtsch, A. Monroy, J. de Pontcharra, G. Auvert, B. Blanchard, M. Mouis, G. Vincent, A. Chantre
Publikováno v:
International Electron Devices Meeting. IEDM Technical Digest.
We report the fabrication of high performance single-polysilicon npn bipolar transistors using a low cost 200 mm 0.35 /spl mu/m bipolar technology. The devices feature record cut-off frequency and maximum oscillation frequency of 35 GHz and 54 GHz re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12d6616a39dcaa89a9c81123c6fae590
https://doi.org/10.1109/iedm.1997.650504
https://doi.org/10.1109/iedm.1997.650504
Publikováno v:
Japanese Journal of Applied Physics. 38:4648
In this paper we investigate, in single-polysilicon quasi self-aligned bipolar transistors of an advanced 0.5 µm planar bipolar-complementary metal-oxide semiconductor (BiCMOS) technology, the base-emitter junction characteristics in reverse bias co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdcc3ac9527ce9607d9c0a0d6c1747ac
https://doi.org/10.1143/jjap.38.4648
https://doi.org/10.1143/jjap.38.4648
Publikováno v:
Electronics Letters. 28:2195
A submicrometre CMOS technology, with selfaligned silicide (salicide) and a high energy implanted retrograde well, has been used to develop bipolar transistors and vertical junction FET devices based on the same pMOS selfaligned structure. Good perfo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1dce93f3e7741baa2c6c2b002104687
https://doi.org/10.1049/el:19921408
https://doi.org/10.1049/el:19921408
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