Výsledky vyhledávání

Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy

Autor: C. E. Glaser, Andrew M. Armstrong, Mary H. Crawford, A. A. Allerman, Greg Pickrell, Vincent M. Abate, J. Kempisty

Publikováno v: Journal of Applied Physics. 126:145703

The impact of dry-etch-induced defects on the electrical performance of regrown, c-plane, GaN p-n diodes where the p-GaN layer is formed by epitaxial regrowth using metal-organic, chemical-vapor deposition was investigated. Diode leakage increased si

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::02aa0d87fd0d896a73e36720179ea814
https://doi.org/10.1063/1.5110521

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Methods of producing plasma enhanced chemical vapor deposition silicon nitride thin films with high compressive and tensile stress

Autor: Paul Ronsheim, Michael P. Belyansky, Anita Madan, M. Chace, J. Kempisty, Y. Li, Yun-Yu Wang, S. Molis, D. Yang, N. Klymko, Oleg Gluschenkov, Anupama Mallikarjunan

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 26:517-521

Various methods of generating high stress in thin plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) films are reported. Besides the mainstream variation of plasma power and other process parameters, novel techniques such as crea

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::032b68923d0204952e008dd2cd452f79
https://doi.org/10.1116/1.2906259

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Control of etch and deposition for embedded SiGe

Autor: J. Kempisty, W. Afoh, C. Sinn, K. Tabakman, R. Van Roijen, R. Logan

Publikováno v: 2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC).

Embedded SiGe is applied in CMOS at recent technology nodes to improve device performance and enable scaling. The position of the SiGe surface with respect to the channel is found to have significant impact on the pFET threshold voltage and also on d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::350256b1d84960fcc32315b61749571c
https://doi.org/10.1109/asmc.2010.5551434

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Novel Enhanced Stressor with Graded Embedded SiGe Source/Drain for High Performance CMOS Devices

Publikováno v: 2006 International Electron Devices Meeting.

We present an advanced CMOS integration scheme based on embedded SiGe (eSiGe) with a novel graded germanium process. The retention of channel strain enabled a pFET performance gain of 15% over a non-graded eSiGe control. When combined with a compress

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6f69c8ec8089702df2e409185a015c70
https://doi.org/10.1109/iedm.2006.346958

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High performance cmos bulk technology using direct silicon bond (dsb) mixed crystal orientation substrates

Publikováno v: IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

High performance 65-nm technology (Lpoly=45nm, EOT=1.2nm) bulk CMOS has been demonstrated for the first time on mixed orientation substrates formed by using direct silicon bonded (DSB) wafers and a solid phase epitaxy (SPE) process. The pFET performa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4a015431a29e48ff0acab278ac9377c5
https://doi.org/10.1109/iedm.2005.1609313

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SiGe Selective Epitaxy Morphology and Thickness Control for High Performance CMOS Technology

Autor: Shwu-Jen Jeng, Dominic J. Schepis, Matthew W. Stoker, Eric C. Harley, Abhishek Dube, Hasan M. Nayfeh, Keith H. Tabakman, Linda Black, Thomas N. Adam, Judson R. Holt, Rohit Pal, Jeremy J. Kempisty

Publikováno v: ECS Meeting Abstracts. :2430-2430

Embedded SiGe (eSiGe) has become a widely used method to enhance device performance. The key step in this process is the selective epitaxial growth of a SiGe film in the source/drain region of the transistor. In the present study, we describe how the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f2a753b56176e157fe2aa510477b5d4
https://doi.org/10.1149/ma2008-02/37/2430

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