Zobrazeno 1 - 10
of 101
pro vyhledávání: '"J. K. Markunas"'
Autor:
D. D. Lofgreen, Priyalal Wijewarnasuriya, Scott M. Johnson, J. K. Markunas, R. N. Jacobs, Kelly A. Jones, J. Arias, Jeffrey M. Peterson, L. A. Almeida, M. Reddy, P. J. Smith, L. O. Bubulac, Andrew J. Stoltz, M. Jaime-Vasquez, J. D. Benson
Publikováno v:
Journal of Electronic Materials. 46:5418-5423
The highest sensitivity, lowest dark current infrared focal plane arrays (IRFPAs) are produced using HgCdTe on CdZnTe substrates. As-received state-of-the-art CdZnTe 6 × 6 and 7 × 7.5 cm substrates were analyzed using Nomarski phase contrast micros
Autor:
R. N. Jacobs, Priyalal Wijewarnasuriya, C. M. Lennon, J. K. Markunas, Andrew J. Stoltz, L. O. Bubulac, J. M. Arias, Jeffrey M. Peterson, Kelly A. Jones, D. D. Lofgreen, M. Reddy, M. Jaime-Vasquez, J. D. Benson, P. J. Smith, L. A. Almeida, Scott M. Johnson
Publikováno v:
Journal of Electronic Materials. 45:4502-4510
State-of-the-art as-received (112)B CdZnTe substrates have been examined for surface impurity contamination and polishing residue. Two 4 cm × 4 cm and one 6 cm × 6 cm (112)B state-of-the-art as-received CdZnTe wafers were analyzed. A maximum surfac
Autor:
A. Yulius, C. M. Lennon, L. A. Almeida, Priyalal Wijewarnasuriya, R. N. Jacobs, Jeffrey M. Peterson, M. Jaime-Vasquez, R. Hirsch, Andrew J. Stoltz, S. Motakef, M. Reddy, J. D. Benson, M. F. Vilela, P. J. Smith, M. Carmody, J. K. Markunas, L. O. Bubulac, J. M. Arias, D. D. Lofgreen, J. Fiala, Scott M. Johnson
Publikováno v:
Journal of Electronic Materials. 44:3082-3091
State-of-the-art as-received (112)B CdZnTe substrates were examined for surface impurity contamination, polishing damage, and tellurium precipitates/inclusions. A maximum surface impurity concentration of Al = 7.5 × 1014, Si = 3.7 × 1013, Cl = 3.12
Autor:
Priyalal Wijewarnasuriya, Jeffrey M. Peterson, D. D. Lofgreen, L. A. Almeida, Daeyeon Lee, G. Bostrup, R. N. Jacobs, Y. Chen, Andrew J. Stoltz, Scott M. Johnson, L. O. Bubulac, M. Jaime-Vasquez, M. Carmody, M. Reddy, J. D. Benson, A. Yulius, G. Brill, M. F. Vilela, J. K. Markunas, S. Couture, P. J. Smith
Publikováno v:
Journal of Electronic Materials. 43:3993-3998
State-of-the-art (112)B CdZnTe substrates were examined for near-surface tellurium precipitate-related defects. The Te precipitate density was observed to be fairly uniform throughout the bulk of the wafer, including the near-surface region. After a
Autor:
K. Brogden, C. M. Lennon, P. J. Smith, N. Supola, R. N. Jacobs, Patrick Maloney, Andrew J. Stoltz, M. Jaime-Vasquez, Alexander Brown, J. D. Benson, L. A. Almeida, J. K. Markunas
Publikováno v:
Journal of Electronic Materials. 43:3708-3717
HgCdTe is the material system of choice for many infrared sensing applications. Growth of this material can often be challenging. However, processing of this material system can be equally as challenging. Incorrect processing can cause shunting, surf
Autor:
J. K. Markunas, Joseph G. Pellegrino, J. D. Benson, R. N. Jacobs, C. M. Lennon, P. J. Smith, L. A. Almeida, J. Arias
Publikováno v:
Journal of Electronic Materials. 42:3344-3348
The surface kinetics of CdTe (211)B grown by molecular beam epitaxy (MBE) is investigated using spectroscopic ellipsometry (SE) during in situ cyclic annealing. A method of measuring sublimation rates from high-index surfaces without use of reflectio
Autor:
M. F. Vilela, David R. Rhiger, Jeffrey M. Peterson, L. O. Bubulac, Y. Chen, J. A. Arias, M. Jaime-Vasquez, P. J. Smith, C. M. Lennon, J. W. Bangs, R. N. Jacobs, J. D. Benson, E. A. Patten, Scott M. Johnson, J. K. Markunas, G. Brill, Priyalal Wijewarnasuriya, L. A. Almeida, D. D. Lofgreen, Andrew J. Stoltz
Publikováno v:
Journal of Electronic Materials. 42:3217-3223
The crystalline structure and impurity profiles of HgCdTe/CdTe/alternate substrate (AS; Si and GaAs are possibilities) and CdTe/AS were analyzed by secondary-ion mass spectrometry, atomic force microscopy, etch pit density analysis, and scanning tran
Autor:
Daeyeon Lee, D. D. Edwall, M. Carmody, J. K. Markunas, J. M. Arias, D. Benson, R. N. Jacobs, Andrew J. Stoltz, A. Almeida, E. Piquette, A. Yulius
Publikováno v:
Journal of Electronic Materials. 41:2719-2724
Alternate substrates for molecular beam epitaxy growth of HgCdTe including Si, Ge, and GaAs have been under development for more than a decade. MBE growth of HgCdTe on GaAs substrates was pioneered by Teledyne Imaging Sensors (TIS) in the 1980s. Howe
Autor:
M. Jaime-Vasquez, J. D. Benson, R. N. Jacobs, Jeffrey M. Peterson, U. Lee, Andrew J. Stoltz, L. A. Almeida, S. Farrell, Y. Chen, L. O. Bubulac, Scott M. Johnson, M. F. Vilela, D. D. Lofgreen, P. J. Smith, E. A. Patten, P. M. Goetz, Priyalal Wijewarnasuriya, G. Brill, J. K. Markunas, David R. Rhiger
Publikováno v:
Journal of Electronic Materials. 40:1847-1853
High-quality (112)B HgCdTe/Si epitaxial films with a dislocation density of ∼9 × 105 cm−2 as determined by etch pit density (EPD) measurements have been obtained by thermal cyclic annealing (TCA). The reduction of the dislocation density by TCA
Publikováno v:
Journal of Electronic Materials. 40:1809-1814
Reduction of threading dislocation density is critical for improving the performance of HgCdTe detectors on lattice-mismatched alternative substrates such as Si. CdTe buffer layers grown by molecular beam epitaxy (MBE), with thicknesses on the order