Zobrazeno 1 - 7
of 7
pro vyhledávání: '"J. K. Arch"'
Publikováno v:
Journal of Applied Physics. 72:1621-1630
The transport‐simulation computer program amps has been used to examine the role of contact barrier heights in determining the performance of a‐Si:H p‐i‐n homojunction detector and solar‐cell devices. Current‐voltage performance, with and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::784e4cac981a5e51b46841ad7b7b02f8
https://doi.org/10.1063/1.351679
https://doi.org/10.1063/1.351679
Publikováno v:
Journal of Applied Physics. 69:7057-7066
The transport simulations provided by the computer program AMPS have been used to give an in‐depth analysis of the role of the p‐layer contact barrier height, contact transport mechanism, p‐layer thickness, and p‐layer quality on the performa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f198f651763e51c10186ea801d5cf973
https://doi.org/10.1063/1.347645
https://doi.org/10.1063/1.347645
Autor:
S. J. Fonash, J. K. Arch
Publikováno v:
Journal of Applied Physics. 68:591-600
We have employed a first‐principles computer program to simulate actual potential profiles and potential profiles obtained experimentally from the Kelvin probe technique. Our results show that the Kelvin probe technique can be used as an in situ me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9711357f6f38bb79f2a107991b73ec0b
https://doi.org/10.1063/1.346812
https://doi.org/10.1063/1.346812
Autor:
S. J. Fonash, J. K. Arch
Publikováno v:
Journal of Applied Physics. 72:4483-4485
The ‘‘analysis of microelectronic and photonic structures’’ (amps) transport‐simulation computer program has been used to show that a distinction can be made between the effects of light‐induced bulk and interfacial degradation in hydroge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1d0efc2cf163f151824ef0ded6f57eb
https://doi.org/10.1063/1.352337
https://doi.org/10.1063/1.352337
Autor:
J. K. Arch, S. J. Fonash
Publikováno v:
Applied Physics Letters. 60:757-759
The transport‐simulation computer program amps has been used to explore the origin and behavior of dark leakage currents in hydrogenated amorphous silicon p‐i‐n detector structures. A comparison of simulated and experimental data reveals that t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13368215ba76258ac919fce78b616988
https://doi.org/10.1063/1.106560
https://doi.org/10.1063/1.106560
Publikováno v:
AIP Conference Proceedings.
The computer program AMPS has been used to explore experimental situations for testing the validity of bimolecular and single‐carrier driven models of metastable defect generation in a‐Si:H. In this study, AMPS was used to evaluate the effect of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15157f94abce8e0b2236103196290e8c
https://doi.org/10.1063/1.41043
https://doi.org/10.1063/1.41043
Publikováno v:
Applied Physics Letters. 51:1611-1613
We undertake a reevaluation of the surface‐photovoltage diffusion‐length experiment, numerically solving the governing equations without any prior assumptions. We find that, although the technique is applicable for crystalline semiconductors, it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6683c827e39bd9e4727c83c10a57b50
https://doi.org/10.1063/1.98571
https://doi.org/10.1063/1.98571