Zobrazeno 1 - 10
of 51
pro vyhledávání: '"J. J. Siddiqui"'
Publikováno v:
Journal of Materials Science: Materials in Electronics. 30:2278-2284
The W-type hexagonal nano ferrites (Ba0.8Al0.2Co0.9Zn1.1Fe19O27) were prepared by a modified sol–gel combustion method. The structural, morphological, magnetic and electromagnetic absorption properties were investigated, using different experimenta
Publikováno v:
Journal of Materials Science: Materials in Electronics. 29:19775-19782
Reduced graphene oxide (RGO)/magnetite (Fe3O4) nanocomposite has been synthesized by an in-situ facile hydrothermal method. The XRD pattern reveals the development of nanocomposite in which both phases are coexistent. Raman Spectroscopy shows the mai
Publikováno v:
IEEE Transactions on Electron Devices. 59:1488-1493
Positive and negative bias temperature instabilities (PBTI and NBTI) of ZnO/HfO2 thin-film transistors are investigated by the bias-temperature-stress test method. PBTI results show a linear shift in threshold voltage in the positive voltage directio
Autor:
C. Fulk, J. J. Siddiqui, P.Y. Emelie, S. Sivananthan, E. Cagin, Jamie Phillips, James W. Garland
Publikováno v:
Journal of Electronic Materials. 36:841-845
The electrical characteristics of organic (3,4-polyethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) contacts to HgCdTe are studied as a potential alternative to metal/HgCdTe contacts. The use of organic PEDOT:PSS contacts offers the potenti
Publikováno v:
Journal of Physics D: Applied Physics. 40:2430-2434
Interfacing of ferroelectric and semiconductor materials provides a means of coupling unique properties associated with ferroelectric materials to high performance semiconductor devices. In this work we report the electronic properties of ferroelectr
Publikováno v:
IEEE Electron Device Letters. 32:1713-1715
The electronic properties of ZnO/HfO2 interface states are studied by dc current-voltage and ac admittance spectroscopy on thin-fllm transistors (TFTs) and metal-insulator-semiconductor capacitor structures. Subthreshold behavior of the transistors i
Publikováno v:
2012 IEEE International Integrated Reliability Workshop Final Report.
As a consequence of the semiconductor industry chasing Moore's Law, device scaling and changes to the transistor's material system has introduced significant emerging reliability concerns which have the potential for drastically shortening device and
Publikováno v:
70th Device Research Conference.
ZnO thin film electronics have received much attention due to the relatively high electron mobility of ZnO thin films in comparison to amorphous silicon (a-Si) and organic thin films. There is significant interest in using ZnO thin film transistors (
Publikováno v:
69th Device Research Conference.
ZnO thin film electronics have received much attention due to the relatively high electron mobility of ZnO thin films in comparison to amorphous silicon (a-Si) and organic thin films. There is significant interest in using ZnO thin film transistors (
Publikováno v:
Applied Physics Letters. 88:212903
The electrical characteristics of ZnO thin-film transistors with high-k (Ba,Sr)TiO3 gate dielectrics are presented. The ZnO and (Ba,Sr)TiO3 thin films were deposited on Pt, exhibiting polycrystalline characteristics. The thin-film devices demonstrate