Zobrazeno 1 - 10
of 214
pro vyhledávání: '"J. J. Marchand"'
Autor:
D. Devore, Brad Woods, Moslem Noori, D. J. J. Marchand, Marc P. Coons, P. Margl, U. Yildiz, A. Roberts, Gili Rosenberg
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-13 (2019)
Scientific Reports
Scientific Reports
Discovering the low-energy conformations of a molecule is of great interest to computational chemists, with applications in in silico materials design and drug discovery. In this paper, we propose a variable neighbourhood search heuristic for the con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c17bac57c6935af892ac1f98c92f53d6
https://doi.org/10.1038/s41598-019-47298-y
https://doi.org/10.1038/s41598-019-47298-y
Akademický článek
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Publikováno v:
Thin Solid Films. 294:211-213
Copyright (c) 1997 Elsevier Science S.A. All rights reserved. We report preliminary results of current transient spectroscopy (CTS) investigations performed on a buried strained Si 0.85 Ge 0.15 channel p-MOSFET structure. Measurements give an activat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e63103fc16cba771c7905535e875164a
https://doi.org/10.1016/s0040-6090(96)09223-1
https://doi.org/10.1016/s0040-6090(96)09223-1
Autor:
Antoine Ronda, Franck Bassani, Isabelle Berbezier, P. Budau, A. Descamps, J. J. Marchand, Toma Stoica, Georges Bremond, L. Vescan
Publikováno v:
Scopus-Elsevier
Ge nanocrystals embedded in SiO2 via a low temperature thermal oxidation of a Si/Ge/Si stack structure grown by low pressure chemical vapour deposition or by molecular beam epitaxy in localized focalized ion beam nanopatterns are characterized by sca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0998ce73f66f4e68ed67de6c6a1140d2
https://doi.org/10.1557/proc-838-o10.12
https://doi.org/10.1557/proc-838-o10.12
Publikováno v:
Applied Physics Letters. 57:1321-1323
Using deep level transient spectroscopy (DLTS), DX center has been characterized in GaAs‐AlAs superlattices grown by molecular beam epitaxy and selectively Si‐doped either in the AlAs layers or in the middle of the GaAs layers. The activation ene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7496b756183488283819669e338b3c99
https://doi.org/10.1063/1.103471
https://doi.org/10.1063/1.103471
Publikováno v:
Superlattices and Microstructures. 7:283-285
DX center has been characterized in four GaAsAlAs superlattices grown by MBE at 580°C. The structures are uniformly Si-doped or selectively Si-doped in the AlAs layers or in the middle of the GaAs layers or on both sides of the interfaces. Deep l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dfb198ee1cb8dffa7ddc4c2db1e9bb2
https://doi.org/10.1016/0749-6036(90)90210-x
https://doi.org/10.1016/0749-6036(90)90210-x
Publikováno v:
Journal of Physics A: Mathematical and Theoretical. 45:115206
In two recent papers, we have shown how one-particle and few-particle lattice Green functions can be calculated efficiently for models with only nearest-neighbor hopping, using continued fractions. Here, we show that a similar type of solution is pos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c9f8408d9b7001272899c2ba0633cd6
https://doi.org/10.1088/1751-8113/45/11/115206
https://doi.org/10.1088/1751-8113/45/11/115206
Akademický článek
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Akademický článek
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Publikováno v:
Journal of Electronic Materials. 18:85-90
We present a study of electrically active defects induced by ion implantation, for two dopants: arsenic and phosphorous. Our analysis technique is Deep Level Transient Spectroscopy (D.L.T.S.). We have studied the generation of defects by direct impla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59710031eeed56d89485ec8e4bf4fa00
https://doi.org/10.1007/bf02655349
https://doi.org/10.1007/bf02655349