Zobrazeno 1 - 3
of 3
pro vyhledávání: '"J. J. M. J. de Klerk"'
Autor:
J. J. M. J. de Klerk, J W Barsten, R.D.J. Verhaar, H. Lifka, J.G. Dil, Casper A. H. Juffermans
Publikováno v:
Microelectronic Engineering. 3:511-518
Mix and Match lithography using both e-beam and optical exposure techniques has been used for the production of MOS-devices with gate dimensions down to a quarter of a micron. Novolac-resist has been applied in the positive and the negative mode. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce7f0f56b1117a8f566622b8d6429e94
https://doi.org/10.1016/0167-9317(85)90064-4
https://doi.org/10.1016/0167-9317(85)90064-4
Autor:
J. J. M. J. de Klerk, C.Z. Van Doorn
Publikováno v:
Journal of Applied Physics. 50:1066-1070
Scanning of more than 100 lines of a reflective twisted‐nematic liquid‐crystal matrix display with full contrast can be achieved using a two‐frequency addressing scheme and a liquid crystal showing a dielectric anisotropy that is positive for l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::982ec77f78ca66c165fe75387c22900b
https://doi.org/10.1063/1.326082
https://doi.org/10.1063/1.326082
Publikováno v:
The Physics and Chemistry of Liquid Crystal Devices ISBN: 9781489921857
It is well known that for a liquid-crystal matrix display without a static memory, and showing “root-mean-square (RMS) behavior,” the maximum number of lines which can be scanned (the scanning capability) is a function of the static optical-respo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dc65afb63103ef265f2cbe635e08a92
https://doi.org/10.1007/978-1-4899-2183-3_8
https://doi.org/10.1007/978-1-4899-2183-3_8
