Zobrazeno 1 - 10
of 10
pro vyhledávání: '"J. J. L. Rascol"'
Autor:
R. E. Carnahan, E. Wolak, K. P. Martin, R. J. Higgins, Luiz A. Cury, J. J. L. Rascol, J. C. Portal, James S. Harris, Kevin L. Lear, Byung-Gook Park
Publikováno v:
Superlattices and Microstructures. 10:175-178
Understanding coherent transport of electrons below (see e.g. Lakhani et al., 1988; England et al., 1989; Vendgurlekar et al., 1990) or above the barriers (Beltram et al., 1989; Gaylord and Brennan, 1988) is important in developing complex quantum we
Publikováno v:
Physical Review B. 41:7860-7863
We have studied the current-voltage (I-V) characteristics of a double-barrier, lattice-matched ${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{In}}_{\mathit{x}}$As/${\mathrm{Al}}_{1\mathrm{\ensuremath{-}}\mathit{y}}$${\mathrm{In}}_{\mat
Autor:
Amir A. Lakhani, J. J. L. Rascol, H. Hier, S. Ben Amor, Robert C. Potter, R. J. Higgins, Kevin P. Martin
Publikováno v:
Surface Science. 228:378-382
We report a study of transport in crossed electric and magnetic fields in a double harrier tunneling structure with a wide (600 A) well. Experiments were conducted on a lattice-matched GaInAs/AlInAs structure at 1.5 K in magnetic fields up to 23 T. A
Autor:
R. J. Higgins, A. Torabi, J. J. L. Rascol, H. M. Harris, Christopher J. Summers, J. C. Portal, S. B. Amor, K. P. Martin, A. Celeste
Publikováno v:
Physical Review B. 41:3733-3737
Identification des processus d'effet tunnel se produisant hors des regles de selection dans le puits quantique double a effet tunnel Al x Ga 1-x As/GaAs. Identification des mecanismes elastiques et inelastiques d'effet tunnel. Determination de la mas
Autor:
James S. Harris, R. J. Higgins, R. E. Carnahan, E. Wolak, Luiz A. Cury, Kevin L. Lear, Byung-Gook Park, J. J. L. Rascol, J. C. Portal, Kevin P. Martin
Publikováno v:
Applied Physics Letters. 58:1482-1484
We present a systematic study of the ballistic electron contribution to the current‐voltage (I‐V) characteristics of vertically integrated resonant tunneling diodes (RTDs) separated by doped spacer layers (Wsp). A magnetic field (B) transverse to
Autor:
S. Ben Amor, R. J. Higgins, E. Hempfling, J. J. L. Rascol, Kevin P. Martin, Robert C. Potter, C. Y. Belhadj, H. Hier
Publikováno v:
Applied Physics Letters. 57:58-60
Using the stable, dc current‐voltage (I‐V) curve measured from a double‐barrier resonant tunneling structure, we have studied the effects of external circuit elements on device oscillations. A simulation, using the experimental I‐V and a simp
Publikováno v:
Applied Physics Letters. 56:1772-1774
We report a study of transport in crossed electric and magnetic (B) fields in a double‐barrier tunneling structure with a wide (600 A) well at T=1.5 K and 0 0.85 V. Under a transverse magnetic field, the bound resonances evolve into magnetoelectric
Autor:
J. J. L. Rascol, K. P. Martin, R. E. Carnahan, R. J. Higgins, L. Cury, J. C. Portal, B. G. Park, E. Wolak, K. L. Lear, J. S. Harris
Publikováno v:
Granular Nanoelectronics ISBN: 9781489936912
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::451ad14f5cde448b1127f4325929e805
https://doi.org/10.1007/978-1-4899-3689-9_40
https://doi.org/10.1007/978-1-4899-3689-9_40
Autor:
H. Hier, Robert C. Potter, Amir A. Lakhani, J. J. L. Rascol, S. Ben Amor, R. J. Higgins, Kevin P. Martin
Publikováno v:
Applied Physics Letters. 54:1908-1910
We report a study of the current‐voltage characteristics of a double barrier, lattice matched, quantum well tunneling structure in a quantizing magnetic field (B∥J). Experiments were conducted at fields up to 23 T at 1.5 K. The heterostructure in
Autor:
R. J. Higgins, J. J. L. Rascol, S. Ben Amor, Christopher J. Summers, H. M. Harris, A. Torabi, Kevin P. Martin
Publikováno v:
Applied Physics Letters. 53:2540-2542
We report the effects of a transverse magnetic field (J⊥B) on the conductivity of quantum well tunneling structures based on AlGaAs/GaAs/AlGaAs quantum wells. The current‐voltage characteristics in the positive differential resistance regime show