Zobrazeno 1 - 10
of 384
pro vyhledávání: '"J. J. Hamilton"'
Autor:
J. J. Hamilton, J. C. Dalrymple-Alford
The nucleus reuniens (RE) in the ventral midline thalamus may provide a critical node between the hippocampus and the prefrontal cortex (PFC) to facilitate systems memory consolidation. Thus far, evidence suggests that the RE has a role in the consol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a356ab0152ca1167b20d6dcd2ce68290
https://doi.org/10.1101/2023.04.01.535203
https://doi.org/10.1101/2023.04.01.535203
Autor:
M J J Hamilton-Ayres, E J Tizard
Publikováno v:
Archives of Disease in Childhood - Education and Practice. 93:1-8
Henoch–Schonlein purpura (HSP) is the commonest vasculitis of childhood. The first description of this disorder was probably that of a young boy with “bloody points” over the shins of his legs, abdominal pain, blood in the stools and urine and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2120dcf137862333812f79a63e0a75f1
https://doi.org/10.1136/adc.2004.066035
https://doi.org/10.1136/adc.2004.066035
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 257:152-156
We investigate the influence of the buried Si/SiO2 interface in Silicon-on-insulator (SOI) substrates on B electrical activation by comparing experimental data and atomistic simulations in bulk Si and SOI materials. In crystalline Si, the effect of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9af466dca589a4efad53bba8fc3722d7
https://doi.org/10.1016/j.nimb.2006.12.157
https://doi.org/10.1016/j.nimb.2006.12.157
Publikováno v:
Materials Science and Engineering: B. :196-199
The work carried out here examines the suitability of BBr 2 + and B + + Br + implants into crystalline (1 0 0) silicon for ultra-shallow junctions (USJ) applications. Rutherford backscattering spectroscopy (RBS) shows that an amorphous region is crea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c5583035e7d814a6ccb6c3e5acdca4d
https://doi.org/10.1016/j.mseb.2005.08.065
https://doi.org/10.1016/j.mseb.2005.08.065
Autor:
Massimo Bersani, E.J.H. Collart, Karen J. Kirkby, J. J. Hamilton, Damiano Giubertoni, Nick E. B. Cowern, B. Colombeau, J. A. Sharp
Publikováno v:
Materials Science and Engineering: B. :215-218
For CMOS technology, generations beyond the 65 nm node a major goal is achieving highly activated, ultra-shallow and abrupt profiles. In the case of p-type (boron) implants, one method to achieve this is using Ge preamorphization (PAI) prior to ultra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a7a0a88d38141790df02496ce5a79b9
https://doi.org/10.1016/j.mseb.2005.08.055
https://doi.org/10.1016/j.mseb.2005.08.055
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 237:93-97
This paper investigates the electrical activation of boron halide molecular implants into silicon and compares them to boron implants at the same effective energy. The implanted species: B + , BF 2 + , BCl 2 + and BBr 2 + were implanted to doses of 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcc3f80ff4fb0ba523ccd6a8e4186e0e
https://doi.org/10.1016/j.nimb.2005.04.084
https://doi.org/10.1016/j.nimb.2005.04.084
Autor:
Houda Graoui, J. J. Hamilton, Nick E. B. Cowern, Susan Felch, D Kirkwood, J. A. van den Berg, E.J.H. Collart, Karen J. Kirkby, S. Tallavarjula
Publikováno v:
Materials Science and Engineering: B. :118-129
The process development focus for 45 nm technology node is very firmly on the transistor and substrate. Formation of ultra-shallow, abrupt and well-activated extension regions remains one of the challenges. For p-type metal oxide semiconductor (PMOS)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd7602a13ee0f63fe854131c3acaa802
https://doi.org/10.1016/j.mseb.2004.07.018
https://doi.org/10.1016/j.mseb.2004.07.018
Autor:
J. J. Hamilton
Publikováno v:
Journal of Mathematical Physics. 38:4914-4928
A family of hypercomplex numbers is introduced in which multiplication is commutative and members can have up to eight components. In particular, the eight basis elements {E} contain those for ordinary complex numbers, E**=E, as well as new elements
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0780fb4964cb1374906d11470cf05279
https://doi.org/10.1063/1.531926
https://doi.org/10.1063/1.531926
Autor:
E. L. Keatley, J. J. Hamilton, A. K. Raychaudhuri, Vera N. Smolyaninova, H. L. Ju, R. L. Greene
Publikováno v:
Physical Review B. 54:14926-14929
We report measurements of the specific heat of La{sub 0.67}Ba{sub 0.33}MnO{sub 3} and La{sub 0.8}Ca{sub 0.2}MnO{sub 3} for temperatures 2{lt}{ital T}{lt}15 K. These materials are ferromagnetic metallic oxides which exhibit colossal magnetoresistance.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4706af7ea631b45cdb2af97c26cec1d6
https://doi.org/10.1103/physrevb.54.14926
https://doi.org/10.1103/physrevb.54.14926
Publikováno v:
Physical Review B. 49:690-693
We have measured in-plane resistivity and magnetoresistance of insulating ${\mathrm{Y}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Pr}}_{\mathit{x}}$${\mathrm{Ba}}_{2}$${\mathrm{Cu}}_{3}$${\mathrm{O}}_{7}$ (x\ensuremath{\sim}0.63) crystals in mag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3a1765869b01b8590e9fd6fa72588c3
https://doi.org/10.1103/physrevb.49.690
https://doi.org/10.1103/physrevb.49.690