Zobrazeno 1 - 3
of 3
pro vyhledávání: '"J. J. Bucchignano"'
Autor:
Shalom J. Wind, Michael John Brady, Cheng-Chung Chi, J. J. Bucchignano, Padmanabhan Santhanam
Publikováno v:
Physical Review B. 50:3487-3490
We have experimentally studied the superconducting behavior of one-dimensional aluminum wires of various lengths. Each wire had much wider two-dimensional contact pads on both sides. At a temperature [ital T] below [ital T][sub [ital c]], when the wi
Autor:
Yanning Sun, K. T. Shiu, Roland Germann, Chiara Marchiori, D. K. Sadana, Keith E. Fogel, Marilyne Sousa, Edward W. Kiewra, N. Ruiz, J. P. de Souza, Jean Fompeyrine, David J. Webb, Steven J. Koester, J. J. Bucchignano, Ghavam G. Shahidi
Publikováno v:
2009 IEEE International Conference on IC Design and Technology.
III–V compound semiconductors have received renewed attention as the channel materials for future generation CMOS technology. High performance long-channel GaAs MOSFETs and short-channel InGaAs MOSFETs are demonstrated. High current of 960 µA/µm
Publikováno v:
Physical Review Letters. 66:2254-2257
We report a systematic experimental study of the superconducting resistive transition in one-dimensional Al wires of length 0.6 to 110 \ensuremath{\mu}m. Shorter wires show a peak in resistance as a function of temperature near ${\mathit{T}}_{\mathit